Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001)

Abel, Joseph; Matsubayashi, Akitomo; Murray, Thomas M.; Dimitrakopoulos, Christos; Farmer, Damon B.; Afzali, Ali; Grill, A.; Sung, Chun Yung; LaBella, V. P.

doi:10.1116/1.4732460

Cited by 5 publications

(6 citation statements)

References 30 publications

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“…To prevent this mismatch high resistive barriers between the contacts and the graphene channel are included 4,[19][20][21][22][23] .…”

Section: Introductionmentioning

confidence: 99%

“…To prevent this mismatch, high resistive barriers between the contacts and the graphene channel are included. 4,[19][20][21][22][23] The most common and reliable way to probe spin transport properties is by performing measurements in the nonlocal spin valve geometry 2,5,24 because it enables the separation of spin and charge currents, avoiding spurious effects. 25 Popinciuc et al 19 describe, in agreement with Takahashi and Maekawa,26 that the measured amplitude of the spin signal in the nonlocal geometry is strongly reduced for low contact resistances R C .…”

Section: Introductionmentioning

confidence: 99%

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Contact-induced spin relaxation in Hanle spin precession measurements

et al. 2012

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Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact-induced spin relaxation on spin transport, in particular on nonlocal Hanle precession measurements. As the Hanle line shape is modified by the contact-induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than four orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of two. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows the reliable extraction of spin transport properties from measurements.

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“…To prevent this mismatch high resistive barriers between the contacts and the graphene channel are included 4,[19][20][21][22][23] .…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Contact-induced spin relaxation in Hanle spin precession measurements

et al. 2012

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“…Here R sq is the square resistance, e the electron charge and ν(E F ) the density of states (DOS) of the diffusive channel at the Fermi energy. Spin transport in graphene has been extensively studied in recent years [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Due to weak spin-orbit coupling g = 2 is commonly assumed to fit Hanle precession data (and define c) [3][4][5][6][7][8][9][10][11][12][13][14][15].…”

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confidence: 99%

“…Spin transport in graphene has been extensively studied in recent years [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Due to weak spin-orbit coupling g = 2 is commonly assumed to fit Hanle precession data (and define c) [3][4][5][6][7][8][9][10][11][12][13][14][15]. This was justified for exfoliated single layer graphene (eSLG) as it was shown that D ≈ D C [5].…”

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confidence: 99%

Localized States Influence Spin Transport in Epitaxial Graphene

et al. 2013

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We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

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“…4 In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. [5][6][7] This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. 1, [8][9][10] A typical graphene based device fabrication process includes: spin coating of photoresist, electron beam lithography, metal or dielectric deposition, and lift-off of excess deposited layers.…”

Section: Introductionmentioning

confidence: 99%

Microstructure fabrication process induced modulations in CVD graphene

et al. 2014

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The systematic Raman spectroscopic study of a “mimicked” graphene device fabrication is presented. Upon photoresist baking, compressive stress is induced in the graphene which disappears after it is removed. The indirect irradiation from the electron beam (through the photoresist) does not significantly alter graphene characteristic Raman peaks indicating that graphene quality is preserved upon the exposure. The 2D peak shifts and the intensity ratio of 2D and G band, I(2D)/I(G), decreases upon direct metal deposition (Co and Py) suggesting that the electronic modulation occurs due to sp2 C-C bond weakening. In contrast, a thin metal oxide film deposited graphene does not show either the significant 2D and G peaks shift or I(2D)/I(G) decrease upon the metal deposition suggesting the oxide protect the graphene quality in the fabrication process.

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Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001)

Cited by 5 publications

References 30 publications

Contact-induced spin relaxation in Hanle spin precession measurements

Contact-induced spin relaxation in Hanle spin precession measurements

Localized States Influence Spin Transport in Epitaxial Graphene

Microstructure fabrication process induced modulations in CVD graphene

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