Fabrication of aluminium doped zinc oxide piezoelectric thin film on a silicon substrate for piezoelectric MEMS energy harvesters

Ralib, Aliza Aini Md; Nordin, Anis Nurashikin; Salleh, Hanim; Othman, Raihan

doi:10.1007/s00542-012-1550-9

Cited by 43 publications

(19 citation statements)

References 10 publications

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“…Some piezoelectric materials are widely used in MEMS energy harvesters, which are aluminum nitride (AlN) [18,19], zinc oxide (ZnO) [20,21], and Pb(Zr x Ti 1-x )O 3 (PZT) [22,23,24,25,26,27]. Among these, PZT has a higher electromechanical coupling coefficient compared with AlN and ZnO.…”

Section: Introductionmentioning

confidence: 99%

A Low-Frequency MEMS Piezoelectric Energy Harvesting System Based on Frequency Up-Conversion Mechanism

Huang

Hou

et al. 2019

Micromachines

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This paper proposes an impact-based micro piezoelectric energy harvesting system (PEHS) working with the frequency up-conversion mechanism. The PEHS consists of a high-frequency straight piezoelectric cantilever (SPC), a low-frequency S-shaped stainless-steel cantilever (SSC), and supporting frames. During the vibration, the frequency up-conversion behavior is realized through the impact between the bottom low-frequency cantilever and the top high-frequency cantilever. The SPC used in the system is fabricated using a new micro electromechanical system (MEMS) fabrication process for a piezoelectric thick film on silicon substrate. The output performances of the single SPC and the PEHS under different excitation accelerations are tested. In the experiment, the normalized power density of the PEHS is 0.216 μW·g−1·Hz−1·cm−3 at 0.3 g acceleration, which is 34 times higher than that of the SPC at the same acceleration level of 0.3 g. The PEHS can improve the output power under the low frequency and low acceleration scenario.

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Section: Introductionmentioning

confidence: 99%

A Low-Frequency MEMS Piezoelectric Energy Harvesting System Based on Frequency Up-Conversion Mechanism

Huang

Hou

et al. 2019

Micromachines

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“…The piezoelectric material is chosen based on its CMOS compatibility, ease of deposition, electromechanical and piezoelectric properties (Md- Ralib et al 2012). Non-ferroelectric piezoelectric materials such as ZnO and AlN have high k 2 , and are highly compatible with CMOS processing making them attractive for SAW applications.…”

Section: Zno Versus Aln As Piezoelectric Thin Filmsmentioning

confidence: 99%

“…ZnO and AlN are wurtzite-structured thin film piezoelectric materials with the polar direction giving piezoelectric response along crystallographic direction (Bassiri-Gharb 2008). Both ZnO and AlN are non-ferroelectric materials do not require poling or post-deposition annealing (Md- Ralib et al 2012). To achieve high electromechanical coupling coefficient, we explore the usage of AlN and ZnO thin films as the piezoelectric layer.…”

Section: Zno Versus Aln As Piezoelectric Thin Filmsmentioning

confidence: 99%

Piezoelectric thin films for double electrode CMOS MEMS surface acoustic wave (SAW) resonator

et al. 2014

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“…The existence of defects, such as Zn interstitial atoms or O atom vacancies, during the preparation of pure ZnO thin films results in ZnO thin films representing as n-type semiconductors. Thus, it is possible to change the conductivity of semiconductor materials with the incorporation of certain impurities (Li, Al, Na, Mg, et al) [14,15,16,17,18]. For example, in 2013, Yuan et al proposed a ZnO thin-film driven microcantilever for nanoscale actuation and sensing based on the radio frequency (RF) magnetron sputtering method, and got a piezoelectric coefficient d 31 of about 4.66 pC/N, in view of the deflection of the cantilever beam tip [13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of the Li-Doped ZnO Thin Films Piezoelectric Energy Harvester with Multi-Resonant Frequencies

Zhao

et al. 2019

Micromachines

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A novel piezoelectric energy harvester with multi-resonant frequencies based on Li-doped ZnO (LZO) thin films is proposed in this paper, consisting of an elastic element with three (or more) different length cantilever beam arrays and a piezoelectric structure (Al/Li-doped ZnO/Pt/Ti). The LZO thin films of piezoelectric structure were prepared on Pt/Ti/SiO2/Si by using a radio frequency (RF) magnetron sputtering method under certain process conditions. When the LZO thin films were deposited with an LZO target concentration of 5 wt%, the piezoelectric coefficient d33 was 9.86 pm/V. Based on this, the energy harvester chips were fabricated on a <100> silicon substrate using micro-electromechanical systems (MEMS) technology, and its performance can be measured by fixing it to a printed circuit board (PCB) test substrate. The experimental results show that, when exerting an external vibration acceleration of 2.2 g and a vibration frequency of 999 Hz, the energy harvester can achieve a big load voltage of 1.02 V at a load resistance of 600 kΩ, and a high load power of 2.3 µW at a load resistance of 200 kΩ.

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Fabrication of aluminium doped zinc oxide piezoelectric thin film on a silicon substrate for piezoelectric MEMS energy harvesters

Cited by 43 publications

References 10 publications

A Low-Frequency MEMS Piezoelectric Energy Harvesting System Based on Frequency Up-Conversion Mechanism

A Low-Frequency MEMS Piezoelectric Energy Harvesting System Based on Frequency Up-Conversion Mechanism

Piezoelectric thin films for double electrode CMOS MEMS surface acoustic wave (SAW) resonator

Fabrication and Characterization of the Li-Doped ZnO Thin Films Piezoelectric Energy Harvester with Multi-Resonant Frequencies

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