Aluminum nitride (AlN) ceramics are promising materials for the thermal management of high power electronics, photovoltaic moduli, and LEDs, because of their high thermal conductivity (the intrinsic thermal conductivity ≈319 W m −1 K −1 ), high electrical resistivity, low dielectric constant, no toxicity, and a coefficient of thermal expansion close to that of silicon. [1][2][3] Up until now, substantial research efforts have been made to enhance the thermal conductivity of AlN ceramic. [4][5][6] The high power density in power electronics applications can cause crack propagation and fatigue failure in ceramic substrates owing to high thermal stresses arising at the joints with circuits. 7,8 Therefore, besides the high thermal conductivity, the superior mechanical strength is also significant for AlN ceramics to be widely useful. Some studies recently have been focused on improving the bending strength of AlN ceramics. Kusunose et al 9 achieved the high bending strength of 433 ± 19 MPa for AlN ceramic with Y 2 O 3 -CeO 2 additives, but its thermal conductivity is just 136 W m −1 K −1 . Beyond