2006
DOI: 10.1016/j.mee.2005.08.006
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Fabrication of a low resistivity tantalum nitride thin film

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Cited by 20 publications
(11 citation statements)
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“…This implies that the dominant phase of metallic Sn could be controlled by N 2 gas ratio. The crystal sizes of metallic Sn were deduced from the Sn(101), (200), (220) and (211) peaks using the Debye-Scherrer's equation [20] and are listed in Table 1. Based on these determined values, the crystal size decreased with increasing N 2 gas ratio.…”
Section: Resultsmentioning
confidence: 99%
“…This implies that the dominant phase of metallic Sn could be controlled by N 2 gas ratio. The crystal sizes of metallic Sn were deduced from the Sn(101), (200), (220) and (211) peaks using the Debye-Scherrer's equation [20] and are listed in Table 1. Based on these determined values, the crystal size decreased with increasing N 2 gas ratio.…”
Section: Resultsmentioning
confidence: 99%
“…However, due to the effect of magnetic atoms, which may be present in the materials, and phonon on the electrical carriers, holes or electrons, it is hard to obtain materials that have constant resistivity in a specific narrow range of temperature used, not to mention for a wide temperature range. Hence, many efforts have been made in lowering the TCR by either controlling the manufacturing processes of materials [1][2][3][4][5][6] or using composite materials. 7 Attempts to explain the low TCR for metallic materials include mechanisms such as based on a mixture effect of surface oxide and inner metallic phase, 8 the effect of K-state associated with the formation of short-range order, 9 or the s-d scattering in transition metals.…”
Section: Copyright 2012 Author(s) This Article Is Distributed Under mentioning
confidence: 99%
“…The X-ray diffractograms of the layers deposited on Si and metallic substrates are shown in Figure 2. The diffractogram shows peaks corresponding to hexagonal ε-TaN and one to the metallic cubic Ta phase [9,[19][20][21][22][23][24][25][26]. The preferred orientation for ε-TaN is (110) for both substrates; for the Si substrate there is a peak corresponding to direction (300).…”
Section: Characterization Of Films (Sem Xrd Raman and Corrosion Stmentioning
confidence: 99%