Fabrication of 200 nm field effect transistor by X-ray lithography with a laser-plasma X-ray source

A compact laser-plasma proximity x-ray lithography system suitable for laboratory-scale low-volume nanometer patterning is presented. The laser-plasma source, which is based on a fluorocarbon liquid-jet target, generates high-brightness ϭ1.2-1.7 nm x-ray emission with only negligible debris production. The Au/SiN x x-ray mask is fabricated by employing ion milling and a high-contrast e-beam resist. With SAL-601 chemically enhanced resist we demonstrate fabrication of high-aspect-ratio, sub-100 nm structures. The exposure time is currently 20 min using a compact 10 Hz, ϭ532 nm, 70 mJ/pulse mode-locked Nd:YAG laser. However, the regenerative liquid-jet target is designed for operation with future, e.g., 1000 Hz, lasers resulting in projected exposure times of ϳ10 s.

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Fabrication of 200 nm field effect transistor by X-ray lithography with a laser-plasma X-ray source

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Terahertz waveguide components fabricated using a 3D x-ray microfabrication technique

Nanometer table-top proximity x-ray lithography with liquid-target laser-plasma source

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