Fabrication of 15 nm wide trenches in Si by vacuum scanning tunneling microscope lithography of an organosilane self-assembled film and reactive ion etching

Perkins, F. Keith; Dobisz, Elizabeth A.; Brandow, Susan L.; Calvert, Jeffrey M.; Kosakowski, John; Marrian, C. R. K.

doi:10.1063/1.116396

Cited by 62 publications

(48 citation statements)

References 9 publications

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“…requisite EL processes, capable of fabricating features as small as » 15 nm in metal with sufficient control of feature-edge acuities and critical dimensions, [29,53] and the VUV [54] and EUV [24] photochemistry of the CMP functional group have been separately demonstrated. VUV irradiation of CMPS SAMs at 172 nm is especially intriguing because exposure leads to disintegration of the CMP aromatic ring [54] and, therefore, the nanocavities themselves.…”

Section: Full Papermentioning

confidence: 99%

A Non-Covalent Approach for Depositing Spatially Selective Materials on Surfaces

et al. 2005

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We describe a new method for depositing patterned materials, based on non‐covalent trapping of ligands in solvent‐templated nanocavities created in aromatic, self‐assembled monolayer or polymer films. A model has been developed and tested to describe nanocavity formation and the ligand adsorption process, which occurs via ligand exclusion from ambient, aqueous solution into the hydrophobic nanocavities. Ligand adsorption rates and ligand adsorbate reactivity with solution species are governed by ligand size/geometry design factors identified using the model. Spatial control of adsorption is achieved via film photochemical changes that inhibit subsequent ligand adsorption/accessibility (UV or X‐ray) or displacement of entrapped ligands (50 keV electron‐beam) during film patterning. The reactivity of the adsorbed ligand is illustrated by the selective binding of PdII species that catalyze electroless metal deposition. Fabrication of high‐resolution (≈ 50 nm), positive‐tone patterns in nickel with acceptable feature‐edge acuity and critical dimension control (≈ 5 %) is demonstrated.

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Section: Full Papermentioning

confidence: 99%

A Non-Covalent Approach for Depositing Spatially Selective Materials on Surfaces

et al. 2005

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“…The use of SAM as a resist for STM lithography gives the potential for a further improvement of the possible resolution over polymeric resist films. SAM might act as a wet etching mask, but they are not able to sustain dry etching without additional metallization [15]. Additionally, they require a specific substrate surface, i.e.…”

Section: Introductionmentioning

confidence: 99%

STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching

Hartwich¹,

Dreeskornfeld²,

Heisig³

et al. 1998

Applied Physics A: Materials Science & Processing

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We report on the fabrication of artificial nanostructures in ultrathin resist films patterned by STM lithography in ultrahigh vacuum ambience. Two different types of resists, polymethylmethacrylate (PMMA) and alkanethiol-type self-assembled monolayer (SAM), have been patterned by an UHV-STM. The PMMA patterns were analyzed by atomic force microscopy (AFM); the SAM patterns were investigated by STM. Lines widths down to 75 nm were reproducibly achieved in PMMA with bias voltages up to 10 V and tip currents of 1 nA. Carbon build-up due to contamination writing and resist removal was observed with the STM patterning the SAM. The PMMA pattern was successfully transferred into the underlying Mo/Si multilayer substrate by fluorine reactive ion etching (RIE), showing STM lithography as an attractive alternative to conventional e-beam lithography for the fabrication of lateral nanostructures in multilayers.

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“…Polysilane is one of the r-conjugated one-dimensional polymers and has been extensively investigated because of their potential utility as hole and electron transport materials in organic multilayer light emitting diodes (LEDs), photo-resist materials, and high-density optical data storage materials [1][2][3][4][5][6][7][8][9][10]. These characteristic features are originated from high hole mobility of 10 À4 cm 2 V À1 s À1 and a low-lying excited state of polysilanes at doped state, which correlates strongly with the electron and hole conductivities as an organic semi-conductor.…”

Section: Introductionmentioning

confidence: 99%

The electronic structures of all trans form of permethyl-oligosilane radical cation with longer chain: A density functional theory study

Kawabata

Ohmori

Matsushige

et al. 2006

Journal of Organometallic Chemistry

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Fabrication of 15 nm wide trenches in Si by vacuum scanning tunneling microscope lithography of an organosilane self-assembled film and reactive ion etching

Abstract: Articles you may be interested inSelf-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching J.

Cited by 62 publications

References 9 publications

A Non-Covalent Approach for Depositing Spatially Selective Materials on Surfaces

A Non-Covalent Approach for Depositing Spatially Selective Materials on Surfaces

STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching

The electronic structures of all trans form of permethyl-oligosilane radical cation with longer chain: A density functional theory study

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