2004
DOI: 10.1116/1.1771668
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Fabrication of 100 nm pitch copper interconnects by electron beam lithography

Abstract: Articles you may be interested inProcess variation-aware three-dimensional proximity effect correction for electron beam direct writing at 45 nm node and beyondIn situ transmission electron microscopy observations of 1.8 μ m and 180 nm Cu interconnects under thermal stresses Appl.

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Cited by 8 publications
(6 citation statements)
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“…In recent years, metal nanowires have been the focus of extensive research activities due to their unusual electrical, magnetic, and optical properties and physical applications such as electrical interconnects, , optical waveguides, , and so forth. Furthermore, they can also be used for highly sensitive detection of gas, chemical, or biological specimen owing to the large surface-to-volume ratio.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…In recent years, metal nanowires have been the focus of extensive research activities due to their unusual electrical, magnetic, and optical properties and physical applications such as electrical interconnects, , optical waveguides, , and so forth. Furthermore, they can also be used for highly sensitive detection of gas, chemical, or biological specimen owing to the large surface-to-volume ratio.…”
mentioning
confidence: 99%
“…Furthermore, they can also be used for highly sensitive detection of gas, chemical, or biological specimen owing to the large surface-to-volume ratio. Fabrication techniques of metal nanowires are consequently of great interest, and various physical and chemical methods, such as electron-beam lithography, ,, chemical reduction, , electrochemical deposition, templated electrochemical deposition, , ,, ,, electromigration, scanning probe nanolithography, etc., have been developed.…”
mentioning
confidence: 99%
“…At present, polymethyl methacrylate (PMMA) based polymer resists containing small amounts of light-sensitive active agents are used in nearly all microelectronic processing. Structures <20 nm in width have been prepared using polymer EB resists [6], but 100 nm is a more typical dimension of the features manufactured by current technology [7].…”
Section: Resist Materials For Lithographymentioning
confidence: 99%
“…The fabrication of high density features have been studied in many areas using a variety of structures: high density gratings [1], high density magnetic structures [2,3], and high density metal interconnects [4]. The fabrication of high density features have been studied in many areas using a variety of structures: high density gratings [1], high density magnetic structures [2,3], and high density metal interconnects [4].…”
Section: Introductionmentioning
confidence: 99%