Abstract:Pattern size and pitch are two major factors that directly affect the ultimate capacity of a data storage unit. Electron beam lithography, because it can be used for direct writing at the nanometer scale, is a candidate for the fabrication of ultra-fine and ultra-compact patterns for the next generation of data storage media.In this paper, we present methods to reduce the pattern size and pitch written by electron beam lithography on the positive tone photo resist Poly(methylmethacrylate) (PMMA). The first met… Show more
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