Fabrication, characterization, and physics of III&amp;#x2013;V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

Dewey, G.; Chu-Kung, B.; Boardman, J.; Fastenau, J. M.; Kavalieros, J.; Kotlyar, R.; Liu, W. K.; Lubyshev, D.; Metz, M.; Mukherjee, Niloy; Oakey, P.; Pillarisetty, R.; Radosavljević, M.; Then, Han Wui; Chau, R.

doi:10.1109/iedm.2011.6131666

Cited by 302 publications

(186 citation statements)

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“…SS T very close to E = 0 does not play an important role, since the near-zero SS FD there results in a near-zero SS, as reflected by Eq. (11). Therefore, a figure of merit−SS T@2kT , which equals the value of SS T at E = 2kT is defined as an indicator of SS T behavior.…”

Section: Intrinsic Ss Degradation In Tfetmentioning

confidence: 99%

“…However, TFETs suffer from low ON-current mainly because of the large band-to-band tunneling (BTBT) barrier, especially for large band gap semiconductors including silicon, the material of choice for mainstream semiconductor technology. To overcome this shortcoming and further improve the subthreshold characteristics, many efforts [1][2][3][4][5][6][7][8][9][10][11] have been focused on proposing new structures/materials for TFETs, among which several [2][3][4] exhibit near perfect (step-like) switching characteristics, i.e., ultra-small SS. However, the hidden physics and design rules leading to such ideal subthreshold characteristics are still not apparent.…”

Section: Introductionmentioning

confidence: 99%

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Subthreshold-swing physics of tunnel field-effect transistors

et al. 2014

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Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade. This letter reports a comprehensive study of the SS of TFETs by examining the effects of electrostatics and material parameters of TFETs on their SS through a physics based analytical model. Based on the analysis, an intrinsic SS degradation effect in TFETs is uncovered. Meanwhile, it is also shown that designing a strong onset condition, quantified by an introduced concept - “onset strength”, for TFETs can effectively overcome this degradation at the onset stage, and thereby achieve ultra-sharp switching characteristics. The uncovered physics provides theoretical support to recent experimental results, and forward looking insight into more advanced TFET design.

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Section: Intrinsic Ss Degradation In Tfetmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Subthreshold-swing physics of tunnel field-effect transistors

et al. 2014

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“…As the SS of a MOSFET is governed by the transport mechanism of thermionic-emission over a thermal barrier and limited to 60 mV/dec at 300 K, further scaling down of Si MOSFET supply voltage becomes difficult without significantly increasing the OFF-state current (I OFF ). In order to control the rapidly increasing power dissipation of a conventional MOSFET, the tunnel field-effect transistor (TFET) [1][2][3][4][5][6][7][8][9][10][11][12] has been proposed as an alternative switching device in recent years. The TFET device is a reverse biased gated p þ -i-n þ diode, which exploits the gate-controlled band-toband tunneling (BTBT) mechanism to overcome the fundamental kT/q thermodynamic limit of SS in a conventional MOSFET.…”

Section: Introductionmentioning

confidence: 99%

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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Articles you may be interested inTunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction J. Appl. Phys. 113, 094502 (2013) The compositional dependence of effective tunneling barrier height (E beff ) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) structures were demonstrated by x-ray photoelectron spectroscopy (XPS). High-resolution x-ray diffraction measurements revealed that the active layers are internally lattice matched. The evolution of defect properties was evaluated using cross-sectional transmission electron microscopy. The defect density at the source/channel heterointerface was controlled by changing the interface properties during growth. By increasing indium (In) and antimony (Sb) alloy compositions from 65% to 70% in In x Ga 1Àx As and 60% to 65% in GaAs 1Ày Sb y layers, the E beff was reduced from 0.30 eV to 0.21 eV, respectively, with the low defect density at the source/channel heterointerface. The transfer characteristics of the fabricated TFET device with an E beff of 0.21 eV show 2Â improvement in ON-state current compared to the device with E beff of 0.30 eV. On contrary, the value of E beff was decreased from 0.21 eV to À0.03 eV due to the presence of high defect density at the GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap, which leads to 4 orders of magnitude increase in OFF-state leakage current. Therefore, a high quality source/channel interface with a properly selected E beff and well maintained low defect density is necessary to obtain both high ON-state current and low OFF-state leakage in a mixed As/Sb TFET structure for high-performance and lower-power logic applications. V C 2012 American Institute of Physics. [http://dx

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“…4.10(a) shows a double gate TFET with identical gates such that the tunneling occurs laterally at a single point at the source channel junction. The key design issues will be similar for other point tunneling devices such as nanowires or even single gate TFETs [12,27]. Fig.…”

Section: Building a Full Tunneling Field Effect Transistormentioning

confidence: 99%

“…(4.2.7), the lower the tunneling probability, the steeper the subthreshold swing voltage. This simple equation is likely to be the explanation of all the experimental steep subthreshold swing voltages that have been measured at extremely low current densities to date [3,5,12]! Since the steepness gets worse at high tunnel probability or higher currents, a steep subthreshold swing voltage at low currents is insufficient for making a practical logic switch.…”

Section: 2) For F In Terms Of Log(t)mentioning

confidence: 99%