Fabrication and Transport Properties of Gate-All-Around Silicon Quantum Wire Transistor

Abstract

A novel fabrication method of silicon quantum wire Gate-All-Around Iransistor (GAAT), in which the gate oxide and the gate electrode are wrapped around the ultra fine silicon quantum wire, has been proposed. In order to verify one-dimensional (1D) subbands effects, we have studied quantum transport in Si quantum wire GAAT with a width of 50nm at low temperatures in zero-magnetic field and in fields up to 10T. Electrical population of lD subbands and magnetic depopulation of lD subbands are clearly observed.

Resonant tunnelling features in quantum dots

“…Transport spectroscopy features have been attributed to structure in the DOS for many years, for example the quasi-1D features observed in narrow MOSFET channels [98,99,100,101] and carbon nanotubes [102,103,104]. The influence of the reservoir DOS was first seen in the pioneering work on discrete energy levels in metal nanoparticles [49].…”

Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

“…INTRODUCTION N ANOSTRUCTURED devices are being extensively investigated for their possible application in CMOS and post-CMOS technologies. The most interesting examples include the fully depleted, ultrathin film silicon-on-insulator (UT-SOI) MOSFETs [1]- [6] and the nanowire transistors, which are promising candidates for the ultimate CMOS downscaling [7]- [11]. The engineering options for the nano-MOSFETs include the choice of the semiconductor and its crystallographic orientation [12]- [15], as well as the biaxial or uniaxial mechanical strain [16]- [19]; all of them deserve an accurate and extensive evaluation by means of device simulations.…”