Fabrication and thermoelectric properties of fine-grained TiNiSn compounds

Zou, Minmin; Li, Jing‐Feng; Du, Bing; Liu, Dawei; Kita, Taizo

doi:10.1016/j.jssc.2009.09.003

Cited by 46 publications

(30 citation statements)

References 20 publications

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“…This is also a consequence of the low phonon density observed at low frequencies (below 100 cm −1 ) in its vibrational DOS with respect to Ni 2 TiSn. 4 It is important to bear in mind that the QHA used in the calculations of α V neglects anharmonic 22 we obtain a value of α V +33 MK −1 close to the thermal expansion coefficient of iron at room temperature. The main errors in these calculated values of the thermal expansion are mainly related to: (i) the calculated equilibrium lattice constant that is slightly different from the experimental measurements (see 1), (ii)…”

Section: Thermal Expansion Coefficientsmentioning

confidence: 71%

Thermal Expansion of Ni–Ti–Sn Heusler and Half-Heusler Materials from First-Principles Calculations and Experiments

et al. 2014

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We coupled first principles calculations and the quasiharmonic approximation combined with experiments (X-Ray diffraction and dilatometry measurements) to determine the thermal properties of NiTiSn (half-Heusler) and Ni 2 TiSn (Heusler) compounds. These properties are important especially if they are to be used in thermoelectric applications. First, the calculation of their mode Gruneisen parameter shows that it is positive throughout the first Brillouin zone.This suggests that these compounds undergo a regular thermal expansion. Then, the calculation of the Ni 2 TiSn thermal expansion shows an excellent agreement, even in the high temperature range, with our high energy powder X-Ray diffraction measurements (ESRF) and dilatometry experiments. In the case of NiTiSn, this agreement is less impressive. This is due to stronger phonon-phonon interactions that are not considered within the quasiharmonic approximation, but also to the difficulty of making high-quality NiTiSn samples. Finally, the constant-pressure and constant-volume heat capacities have been calculated for both compounds and compared * To whom correspondence should be addressed 1 arXiv:1504.01606v1 [cond-mat.mtrl-sci] 7 Apr 2015 with the experimental data reported in the literature. In particular, we have decomposed the constant-volume heat capacity of Ni 2 TiSn into a purely electronic and a phonon-mediated contribution, and we discuss each of them.

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Section: Thermal Expansion Coefficientsmentioning

confidence: 71%

Thermal Expansion of Ni–Ti–Sn Heusler and Half-Heusler Materials from First-Principles Calculations and Experiments

et al. 2014

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“…Compared with the PbTe or LAST systems, half-Heusler compounds are more environmentally benign and hence have attracted increasing levels of interest [70][71][72][73][74]. Half-Heusler compounds are crystallized in the MgAgAs-type structure with space group F4 ‾3m, which can be regarded as two interpenetrating cubic face-centered-cubic …”

Section: Half-heusler Compoundsmentioning

confidence: 99%

High-performance nanostructured thermoelectric materials

et al. 2010

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T he conversion of thermal energy to electrical energy is known as thermoelectric (TE) conversion. Th e TE eff ect can be used for both power generation and electronic refrigeration. When a temperature gradient (ΔT ) is applied to a TE couple consisting of n-type (electron-transporting) and p-type (hole-transporting) elements, the mobile charge carriers at the hot end tend to diff use to the cold end, producing an electrostatic potential (ΔV ). Th is characteristic, known as the Seebeck eff ect, where α = ΔV/ΔT is defi ned as the Seebeck coeffi cient, is the basis of TE power generation, as shown in Figure 1(a). Conversely, when a voltage is applied to a TE couple, the carriers attempt to return to the electron equilibrium that existed before the current was applied by absorbing energy at one connector and releasing it at the other, an eff ect known as the Peltier eff ect, as shown in Figure 1(b). Th ermoelectric technology and solid-state devices based on the TE eff ect have a number of advantages, including having no moving parts, and being reliable and scalable. Th e technology has therefore arouse worldwide interest in many fi elds, including waste heat recovery and solar heat utilization (power generation mode), and temperature-controlled seats, portable picnic coolers and thermal management in microprocessors (active refrigeration mode) [1].Th e effi ciency of TE devices is strongly associated with the dimensionless fi gure of merit (ZT) of TE materials, defi ned as ZT = (α 2 σ/κ)T, where σ, κ and T are the electrical resistivity, thermal conductivity and absolute temperature [2]. High electrical conductivity (corresponding to low Joule heating), a large Seebeck coeffi cient (corresponding to large potential diff erence) and low thermal conductivity (corresponding to a large temperature diff erence) are therefore necessary in order to realize high-performance TE materials. Th e ZT fi gure is also a very convenient indictor for evaluating the potential effi ciency of TE devices. In general, good TE materials have a ZT value of close to unity. However, ZT values of up to three are considered to be essential for TE energy converters that can compete on effi ciency with mechanical power generation and active refrigeration.High-performance TE materials have been pursued since Bi 2 Te 3 -based alloys were discovered in the 1960s. Until the end of last century, moderate progress had been made in the development of TE materials. Th e benchmark of ZT ≈ 1 was broken in the mid-1990s by two Tsinghua University, China Thermoelectric eff ects enable direct conversion between thermal and electrical energy and provide an alternative route for power generation and refrigeration. Over the past ten years, the exploration of high-performance thermoelectric materials has attracted great attention from both an academic research perspective and with a view to industrial applications. This review summarizes the progress that has been made in recent years in developing thermoelectric materials with a high dimensionless fi gure of...

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“…Other environmentally benign compounds are the halfHeusler compounds, which have also attracted increasing interest [87][88][89][90]. Uher et al [87] found that the isoelectronic alloying of Zr 0.5 Hf 0.5 NiSn produced a higher ZT value than did ZrNiSn or HfNiSn alone because of a reduction in thermal conductivity.…”

Section: Other Thermoelectric Materials (Oxides and Half-heusler Compmentioning

confidence: 99%

Developments in semiconductor thermoelectric materials

Chen

Zhou

et al. 2011

Front. Energy

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A surge in interest in developing alternative renewable energy technologies has been observed in recent years. In particular, thermoelectrics has drawn attention because thermoelectric effects enable direct conversion between thermal and electrical energy, and provide power generation and refrigeration alternatives. During the past decade, the performance of thermoelectric materials has been considerably improved; however, many challenges continue to exist. Developing thermoelectric materials with superior performance means tailoring interconnected thermoelectric physical parameters-electrical conductivities, Seebeck coefficients, and thermal conductivities for a crystalline system. The objectives of this paper are to introduce the recent developments in semiconductor thermoelectric materials, and briefly summarize the applications of such materials.

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Fabrication and thermoelectric properties of fine-grained TiNiSn compounds

Cited by 46 publications

References 20 publications

Thermal Expansion of Ni–Ti–Sn Heusler and Half-Heusler Materials from First-Principles Calculations and Experiments

Thermal Expansion of Ni–Ti–Sn Heusler and Half-Heusler Materials from First-Principles Calculations and Experiments

High-performance nanostructured thermoelectric materials

Developments in semiconductor thermoelectric materials

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