Fabrication and properties of well-ordered arrays of single-crystalline NiSi2 nanowires and epitaxial NiSi2/Si heterostructures

Chuang, C.F.; Cheng, Sheng-Tzong

doi:10.1007/s12274-014-0519-7

Cited by 11 publications

(5 citation statements)

References 54 publications

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“…This fact may be further reasoned by the intrinsic challenges related to the synthesis of such core–shell structures, mainly due to the difficulty in attaining the formation of thickness-controlled NiSi shell structures of ultrathin dimensions and high morphological quality, 1–30 nm, at the given Ni diffusion and silicide growth rates, without leading to the inevitable formation of completely silicidized nanowires. Few recent works ,− focused on the Ni diffusion into Si nanostructures. In these reports, an angular tilted deposition of Ni was performed leading to partially covered Si nanopillars, followed by a thermal treatment resulting in a formation of irregular Ni silicide/Si structures. , Furthermore, the transmission electron microscopy (TEM) analysis performed in these cases was limited by the nanopillars thickness, thicker than 100 nm.…”

Section: Results and Discussionmentioning

confidence: 99%

“…Few recent works ,− focused on the Ni diffusion into Si nanostructures. In these reports, an angular tilted deposition of Ni was performed leading to partially covered Si nanopillars, followed by a thermal treatment resulting in a formation of irregular Ni silicide/Si structures. , Furthermore, the transmission electron microscopy (TEM) analysis performed in these cases was limited by the nanopillars thickness, thicker than 100 nm. In addition, due to fast Ni diffusion rate and short radial diffusion depth, undesirable features might occur, such as severe surface agglomeration, or the formation of fully silicided nanopillars.…”

Section: Results and Discussionmentioning

confidence: 99%

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Controlled Formation of Radial Core–Shell Si/Metal Silicide Crystalline Heterostructures

et al. 2017

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The highly controlled formation of "radial" silicon/NiSi core-shell nanowire heterostructures has been demonstrated for the first time. Here, we investigated the "radial" diffusion of nickel atoms into crystalline nanoscale silicon pillar 11 cores, followed by nickel silicide phase formation and the creation of a well-defined shell structure. The described approach is based on a two-step thermal process, which involves metal diffusion at low temperatures in the range of 200-400 °C, followed by a thermal curing step at a higher temperature of 400 °C. In-depth crystallographic analysis was performed by nanosectioning the resulting silicide-shelled silicon nanopillar heterostructures, giving us the ability to study in detail the newly formed silicide shells. Remarkably, it was observed that the resulting silicide shell thickness has a self-limiting behavior, and can be tightly controlled by the modulation of the initial diffusion-step temperature. In addition, electrical measurements of the core-shell structures revealed that the resulting shells can serve as an embedded conductive layer in future optoelectronic applications. This research provides a broad insight into the Ni silicide "radial" diffusion process at the nanoscale regime, and offers a simple approach to form thickness-controlled metal silicide shells in the range of 5-100 nm around semiconductor nanowire core structures, regardless the diameter of the nanowire cores. These high quality Si/NiSi core-shell nanowire structures will be applied in the near future as building blocks for the creation of utrathin highly conductive optically transparent top electrodes, over vertical nanopillars-based solar cell devices, which may subsequently lead to significant performance improvements of these devices in terms of charge collection and reduced recombination.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Controlled Formation of Radial Core–Shell Si/Metal Silicide Crystalline Heterostructures

et al. 2017

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“…However, depending on the thickness of the Ni film, different intermediate phases of Ni silicides richer in Ni are formed prior to the formation of the desired NiSi 2 phase. Other more complex methods, such as high-vacuum electron-beam evaporation, have been used for the formation of NiSi 2 nanowires (Chuang & Cheng, 2014).…”

Section: Introductionmentioning

confidence: 99%

Two-step GISAXS characterization of NiSi₂ nanoplates and Ni nanocrystals embedded in a silicon wafer covered with a silica thin film

Costa¹,

Kellermann²,

Craievich³

2023

J Appl Cryst

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Here, an experimental grazing-incidence small-angle X-ray scattering (GISAXS) study of the nanostructure of a sample composed of a Si(001) wafer covered by a Ni-doped SiO2 thin film and thermally treated at high temperature is described. Previous studies indicated that this type of composite contains Ni nanocrystals mainly inside the thin film and NiSi2 nanoplates buried in the Si wafer. To achieve accurate determinations of low-resolution structural parameters of the nanoparticles derived from the experimental results (shape, volume and size), two GISAXS patterns were recorded. The first pattern was produced by the Si wafer covered by a nanoporous Ni-doped SiO2 thin film and the second pattern was recorded after removal of the SiO2 thin film by chemical etching. By using the procedure of best fitting of a modeled isotropic GISAXS intensity to a set of 1D GISAXS patterns recorded before thin-film removal, the average radius and radius dispersion of a size polydisperse set of spherical Ni nanocrystals were determined. The GISAXS pattern recorded after removal of the SiO2 thin film was almost completely due to the scattering intensity produced by oriented NiSi2 nanoplates located inside the Si wafer. By fitting a theoretical function for the X-ray scattering intensity produced by oriented nanoplates to a set of experimental 1D GISAXS patterns, the maximum diameters and average thickness of the hexagonal NiSi2 nanoplates were determined. The GISAXS intensity pattern produced by the sample after thin-film removal is essentially anisotropic (with only a weak isotropic contribution from Ni nanocrystals), thus allowing for precise quantitative determinations of the relevant sizes of the NiSi2 nanoplates.

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“…Metal silicides originating from the coupling between silicon (the second most abundant metal on earth) and metals with superior hybrid bonds and covalent bonds exhibit outstanding characteristics, including a high melting point, low resistivity, thermal conductivity, antioxidant ability, and chemical durability [9,10]. As low-cost and earth-rich inorganic materials, metal silicides are becoming indispensable components in various applied catalytic systems and exhibit better performances than their monometallic counterparts [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Acid-durable intermetallic CaNi2Si2 catalyst with electron-rich Ni sites for aqueous phase hydrogenation of unsaturated organic anhydrides/acids

Liu

Gong

Yang

et al. 2023

Chinese Journal of Catalysis

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Fabrication and properties of well-ordered arrays of single-crystalline NiSi2 nanowires and epitaxial NiSi2/Si heterostructures

Cited by 11 publications

References 54 publications

Controlled Formation of Radial Core–Shell Si/Metal Silicide Crystalline Heterostructures

Controlled Formation of Radial Core–Shell Si/Metal Silicide Crystalline Heterostructures

Two-step GISAXS characterization of NiSi₂ nanoplates and Ni nanocrystals embedded in a silicon wafer covered with a silica thin film

Acid-durable intermetallic CaNi2Si2 catalyst with electron-rich Ni sites for aqueous phase hydrogenation of unsaturated organic anhydrides/acids

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Fabrication and properties of well-ordered arrays of single-crystalline NiSi2 nanowires and epitaxial NiSi2/Si heterostructures

Cited by 11 publications

References 54 publications

Controlled Formation of Radial Core–Shell Si/Metal Silicide Crystalline Heterostructures

Controlled Formation of Radial Core–Shell Si/Metal Silicide Crystalline Heterostructures

Two-step GISAXS characterization of NiSi2 nanoplates and Ni nanocrystals embedded in a silicon wafer covered with a silica thin film

Acid-durable intermetallic CaNi2Si2 catalyst with electron-rich Ni sites for aqueous phase hydrogenation of unsaturated organic anhydrides/acids

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Product

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Two-step GISAXS characterization of NiSi₂ nanoplates and Ni nanocrystals embedded in a silicon wafer covered with a silica thin film