Fabrication and modulation characteristics of 1.3 µm p-doped InAs quantum dot vertical cavity surface emitting lasers

Abstract

We present the fabrication of 1.3 µm waveband p-doped InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with an extremely simple process. The continuous-wave saturated output power of 1.1 mW with a lasing wavelength of 1280 nm is obtained at room temperature. The high-speed modulation characteristics of p-doped QD VCSELs of two different oxide aperture sizes are investigated and compared. The maximum 3 dB modulation bandwidth of 2.5 GHz can be achieved at a bias current of 7 mA for a p-doped QD VCSEL with an oxide aperture size of 10 µm in the small signal frequency response measurements. The crucial factors for the 3 dB bandwidth limitation are discussed according to the parameters' extraction from frequency response.

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

“…Согласно тео-ретическим расчетам [57], увеличение плотности квантовых точек до 10 11 cm −2 и применение технологии вертикального складирования рядов квантовых точек (до 15−20 рядов) потенциально позволяют достичь предельного быстродействия ВИЛ ∼ 10 GHz. Однако на прак-тике быстродействие ВИЛ на основе квантовых точек InAs/InGaAs спектрального диапазона 1300 nm ограничено частотой эффективной модуляции ∼ 2.5 GHz [58,59].…”

Fabrication and characterization of 1.3-μm InAs quantum-dot VCSELs and monolithic VCSEL arrays

“…The detailed devices epitaxy structure and fabrication process of QD-VCSELs were fully described in our previous works [14] . In short, the epitaxial structure consists of QD's active region sandwiched in between top and bottom distributed Bragg reflector (DBR) mirrors.…”

“…The solid lines in figure 5 (a) and (b) are fitting to the modulation response based on three-pole transfer function[14] . Because 5-μm aperture device was fabricated in different batch of process and measured with temperature control to 25 o C, the threepole transfer function fitting as well as dynamic parameters' extraction and compare was only carried out for 10-μm and 15-μm aperture devices.…”

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure

“…InAs quantum dot ͑QD͒ vertical cavity surface emitting lasers ͑VCSELs͒ emitting at 1.3 m region are very promising for light source applications in low-cost access network, free-space optical communications, all-optical signal processing, etc., owing to low-threshold current, low power consumption, high thermal stability, and simple fabrication process [1][2][3][4][5] compared with InP-based or GaAs-based quantum well ͑QW͒-VCSELs.…”