Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure

Abstract

Microphotoluminescence investigation of InAs quantum dot active region in 1.3ﾠμm vertical cavity surface emitting laser structure Ding, Y.

Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers

“…In this way, the influence of distributed Bragg reflectors (DBRs) in QD−VCSEL structure can be eliminated completely. Be− sides, we did not find distinct polarization difference bet− ween EEEE μ−PL technique with conventional surface−exci− tation and surface−emission PL measurement although the directions of excitation and emission were changed [21].…”

“…We employed the edge−excita− tion and edge−emission (EEEE) μ−PL technique to deter− mine the precise QD luminescence spectra at room tempera− ture within an as−grown QD−VCSEL structure [21]. In this way, the influence of distributed Bragg reflectors (DBRs) in QD−VCSEL structure can be eliminated completely.…”

Electronic structures and optical properties of dilute nitride quantum dots

“…InAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer was used for experimental comparison. We employed the edge-excitation and edge-emission (EEEE) μ-PL technique to determine the precise QD luminescence spectra at room temperature within an as-grown QD-VCSEL structure [96]. In this way, the influence of distributed Bragg reflectors (DBRs) in QD-VCSEL structure can be eliminated completely.…”