Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs

Wong, I-Hsieh; Chen, Yen‐Ting; Yan, Jhih-Yang; Ciou, Huang-Jhih; Chen, Yu‐Sheng; C, Liu

doi:10.1109/ted.2014.2318083

Cited by 22 publications

(11 citation statements)

References 18 publications

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“…The gmmax/Weff reference value is at a GP doping concentration of 1x10 17 cm -3 . The transconductance shows to be slightly dependent on fin width due to the combination of electrostatic coupling and hole mobility that are higher for narrow devices [23]. Additionally, the reduction of gm as the Wfin increases, can be correlated to the mobility degradation in the channel due to the doping dependence [6], since there is a increase of the channel doping concentration at the bottom part of the fin, as the GP doping concentration becomes higher as shown in Fig.…”

Section: Part I Experimental Resultsmentioning

confidence: 92%

Ground Plane Impact on Performance of Relaxed Ge FinFETs

Oliveira¹,

Gonçalves²,

Agopian³

et al. 2019

JICS

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The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

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Section: Part I Experimental Resultsmentioning

confidence: 92%

Ground Plane Impact on Performance of Relaxed Ge FinFETs

Oliveira¹,

Gonçalves²,

Agopian³

et al. 2019

JICS

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“…Having extracted the BSIM3v3.2.2 parameters for Ge channel devices we employ ADS circuit simulator to obtain the transfer characteristics for both long and short channel devices and make a comparison with the reported experimental characteristics (Wong et al 2014;Hellings et al 2009) and our TCAD simulated characteristics as shown in Figs. 3 and 4a.…”

Section: Resultsmentioning

confidence: 99%

“…In this paper, we have attempted to extract the set of BSIM3v3.2.2 parameters for Ge channel MOSFETs using primarily the experimental characteristics published elsewhere (Wong et al 2014;Hellings et al 2009) and our TCAD simulation results (ATLAS Users' Manual 2012). The algorithm is developed to match the BSIM3v3.2.2 model equations with the experimental and TCAD simulation results for Ge MOSFETs having a wide range of device geometry, and gate and drain bias conditions.…”

Section: Introductionmentioning

confidence: 99%

Development of a methodology for the extraction of BSIM3v3.2.2 parameters of Ge-channel MOSFETs and estimation of analog circuit performance

2016

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methodology. The extracted set of BSIM3V3.2.2 parameters is used to generate transfer and output characteristics of Ge channel pMOSFETs at channel length of 70 nm. The extracted value of threshold voltage, bulk mobility and saturation velocity are −0.2 V, 0.18 m 2 /V.s and 1.2 × 10 6 m/s, respectively. Our study reveals that various device parameters such as transconductance, intrinsic voltage gain, and cut-off frequency show a maximum value of 677 μS/μm, 2.7, and 63 GHz, respectively.

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“…For n-channel MOSFET (nMOS) I ON mainly depend upon the electron mobility and due to higher electron mobility in InGaAs material over the Si and Ge materials, nMOS based on InGaAs are the most promising devices. Similarly for p-channel MOSFET (pMOS), hole mobility plays major role for I ON in the channel region [7,8]. For that purpose Ge is the most suitable material.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of Ge pMOS and In0.3Ga0.7As nMOS with Si MOSFETs for digital applications

Aher

Borse

Jawake

et al. 2015

2015 Annual IEEE India Conference (INDICON)

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In this paper, comparative analysis of ultra-thin body (UTB) silicon-on-insulator (SOI) and III-V-on-insulator (XOI) nchannel metal oxide semiconductor field effect transistors (MOSFETs) has been carried out. In addition, the comparative analysis of UTB SOI and Ge-on-insulator (GOI) p-channel MOSFETs has also been carried out. It has been found that, due to higher electron mobility in In 0.3 Ga 0.7 As and hole mobility in Ge, ON-state drive current (I ON ) in the case of In 0.3 Ga 0.7 As nchannel MOSFET (nMOS) and Ge p-channel MOSFET (pMOS) is significantly improved over the SOI nMOS and pMOS devices. Further, sub-threshold swing (SS), drain induced barrier lowering (DIBL) and the OFF-state leakage current (I OFF ) in the case of InGaAs nMOS and Ge pMOS reduces over the SOI nMOS and pMOS devices. This clearly shows that, InGaAs nMOS and Ge pMOS are the most promising devices for future digital integrated circuits.

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Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs

Cited by 22 publications

References 18 publications

Ground Plane Impact on Performance of Relaxed Ge FinFETs

Ground Plane Impact on Performance of Relaxed Ge FinFETs

Development of a methodology for the extraction of BSIM3v3.2.2 parameters of Ge-channel MOSFETs and estimation of analog circuit performance

Comparative study of Ge pMOS and In0.3Ga0.7As nMOS with Si MOSFETs for digital applications

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