Fabrication and high-frequency characterization of low-cost fan-in/out WLP technology with RDL for 2.5D/3D heterogeneous integration

Xu, Jun; Sun, Ying; Li, Jun; Wei, Yi-Ding; Zhao, Wensheng; Wang, Dawei

doi:10.1016/j.mejo.2021.105332

Cited by 9 publications

(4 citation statements)

References 19 publications

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“…According to the structures designed above, a 12-inch waferlevel TMV additive manufacturing fabrication process was used to fabricate Samples 1-3. As shown in Figure 3, the whole process contained eight steps, in which Steps (a)-(c) were RDL fabrication method (Onozeki et al, 2018;Xu et al, 2022a): 1 A 12-inch silicon wafer with the thickness of 775 mm was applied as the substrate. Resin films were laminated on the both sides and heated at 200°C for 1 h. 2 After Ti/Cu seed layer sputtering and 10 mm-thick photoresist (PR) spin-coating, PR was photoetched to form the bottom CPW pattern.…”

Section: Fabrication Processmentioning

confidence: 99%

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A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

Zhao,

Pang,

Wang

et al. 2023

SSMT

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Purpose This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss. Design/methodology/approach An advanced packaging method, 12-inch wafer-level through-mold-via (TMV) additive manufacturing, is used to fabricate a 3D resin-based coaxial transition with a continuous ground wall (named resin-coaxial transition). Designation and simulation are implemented to ensure the application universality and fabrication feasibility. The outer radius R of coaxial transition is optimized by designing and fabricating three samples. Findings The fabricated coaxial transition possesses an inner radius of 40 µm and a length of 200 µm. The optimized sample with an outer radius R of 155 µm exhibits S11 < –10 dB and S21 > –1.3 dB at 10–110 GHz and the smallest insertion loss (S21 = 0.83 dB at 77 GHz) among the samples. Moreover, the S21 of the samples increases at 58.4–90.1 GHz, indicating a broad and suitable working bandwidth. Originality/value The wafer-level TMV additive manufacturing method is applied to fabricate coaxial transitions for the first time. The fabricated resin-coaxial transitions show good performance up to the W-band. It may provide new strategies for novel designing and fabricating methods of RF transitions.

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Section: Fabrication Processmentioning

confidence: 99%

“…According to the structures designed above, a 12-inch wafer-level TMV additive manufacturing fabrication process was used to fabricate Samples 1–3. As shown in Figure 3, the whole process contained eight steps, in which Steps (a)–(c) were RDL fabrication method (Onozeki et al , 2018; Xu et al , 2022a):…”

Section: Fabrication Processmentioning

confidence: 99%

A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

Zhao,

Pang,

Wang

et al. 2023

SSMT

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“…This article proposes a novel SIW-based bandpass filter with periodic arrays of meander-slot etching on the top metallic layer. In [30], an advanced RDL (redistribution layer) process was adopted to design passive components, and it proved to be feasible. In this article, we design the filter using a silicon substrate with 4 RDLs.…”

Section: Introductionmentioning

confidence: 99%

Wideband Substrate Integrated Waveguide Chip Filter Using Spoof Surface Plasmon Polariton

et al. 2022

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This article presents a novel wideband bandpass filter based on the integration of a substrate integrated waveguide (SIW) and a spoof surface plasmon polariton (SSPP). An SIW cavity with periodic arrays of meander-slot units is etched on the top metallic layer to achieve the characteristics of a multi-order filter with good performance. The passbands can be flexibly selected by varying the geometric parameters of the SIW and SSPP to adjust the lower and upper sidebands independently. Using a redistribution layer (RDL) process, a novel 3D capacitive interconnection called a through-dielectric capacitor (TDC) is proposed and collaboratively designed with an interdigital capacitor to achieve capacitive source-load cross-coupling. The proposed filter has a center frequency of 60 GHz, with a wide 3-dB fractional bandwidth of about 45.8%. The improved simulated sideband suppression has a 30 dB rejection at 40 GHz and 75.4 GHz, corresponding to a 30-dB rectangular coefficient of 1.28.

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“…Due to a low dielectric loss, a glass interposer was used for high-performance highfrequency applications. The accurate characterization of through-glass via (TGV) interconnects is critical for their applications [8,9]. However, non-coplanar ends would pose challenges to the testing process.…”

mentioning

confidence: 99%

Editorial for the Special Issue on Advanced Interconnect and Packaging, 2nd Edition

Wang,

Zhao

2024

Micromachines

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Fabrication and high-frequency characterization of low-cost fan-in/out WLP technology with RDL for 2.5D/3D heterogeneous integration

Cited by 9 publications

References 19 publications

A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

Wideband Substrate Integrated Waveguide Chip Filter Using Spoof Surface Plasmon Polariton

Editorial for the Special Issue on Advanced Interconnect and Packaging, 2nd Edition

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