Fabrication and electrochemical behavior of vertically-aligned carbon nanotube electrodes covalently attached to p-type silicon via a thioester linkage

Poh, Zihan; Flavel, Benjamin S.; Shearer, Cameron J.; Shapter, Joseph G.; Ellis, Amanda

doi:10.1016/j.matlet.2008.12.043

Cited by 14 publications

(13 citation statements)

References 13 publications

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“…This type of chemistry creates unique opportunities for further derivatization and subsequent reaction of CNTs with Si substrates. Ellis and co-workers have recently published work on two new techniques for the functionalization of CNTs with dithio- [31,32] and bis-dithioester moieties. [33,34] The first, and in fact most facile, approach involves derivatizing newly formed hydroxyl and carboxyl moieties on acid-treated CNTs to thioesters using a mild but versatile electrophilic catalyst, phosphorus pentasulfide (P 4 S 10 ).…”

Section: Cnt Preparationmentioning

confidence: 99%

“…[62] 2.2.3.3. Functionalization of Oxidized pSi Surfaces: Chemical attachment of CNTs to oxidized pSi surfaces using methods that have been previously successful on bulk silicon [32,[65][66][67] have resulted in variable alignment and coverage of nanotubes. [51] In most cases, the methods involve simple coupling reactions Figure 7.…”

Section: Silicon Preparationmentioning

confidence: 99%

“…between carboxyl groups on the ends of CNTs and functional groups on the silicon surface (hydroxyl, [67] thiol, [32] amine [33] ). The direct silyl ester attachment method (Fig.…”

Section: Attachment Via Silanol Groups (Siliconmentioning

confidence: 99%

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Carbon Nanotubes Anchored to Silicon for Device Fabrication

et al. 2010

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This report highlights recent progress in the fabrication of vertically aligned carbon nanotubes (VA-CNTs) on silicon-based materials. Research into these nanostructured composite materials is spurred by the importance of silicon as a basis for most current devices and the disruptive properties of CNTs. Various CNT attachments methods of covalent and adsorptive nature are critically compared. Selected examples of device applications where the VA-CNT on silicon assemblies are showing particular promise are discussed. These applications include field emitters, filtration membranes, dry adhesives, sensors and scaffolds for biointerfaces.

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Section: Cnt Preparationmentioning

confidence: 99%

Section: Silicon Preparationmentioning

confidence: 99%

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Carbon Nanotubes Anchored to Silicon for Device Fabrication

et al. 2010

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“…44 Fig . 4 shows the results of attaching nanotubes using phosphorous pentasulfide with hydroxylated pSi (10 min ozone).…”

Section: Phosphorous Pentasulfide Mediated Attachmentmentioning

confidence: 99%

“…We attribute this effect to the different mechanism of attachment involving the conversion of surface hydroxyl groups to thiols. 44 On the pSi surface, the germinal hydroxyl groups are converted to geminal thiol groups (in the presence of P 4 S 10 ) these newly formed thiols may oxidise to form a disulfide bond. These bonds render the surface more hydrophobic which might encourage adsorption of the SWCNTs sidewalls, resulting in side-on attachment.…”

Section: Phosphorous Pentasulfide Mediated Attachmentmentioning

confidence: 99%

Preparation and characterisation of vertically aligned single-walled carbon nanotube arrays on porous silicon

et al. 2008

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Edge Chemistry of Armchair Graphene Nanoribbons Containing Sulfur Functional Groups: Towards an Understanding of the Spin‐Dependent Electrochemistry

López–Urías

Fajardo‐Díaz

Cortés-López

et al. 2020

Advcd Theory and Sims

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Numerous sulfur functional groups (35) attached to the edges of armchair graphene nanoribbons are investigated through the use of quantum mechanical calculations. Results for the band structure, formation energy, charge transfer, total hydrophilicity index, and electronic bandgaps are shown. The thiophene‐like functional group proved to be the most energetically stable, followed by the pyrrolic‐N‐sulfide. Typically, the sulfurized functional groups pulled out electrons from the ribbon, promoting p‐type doping. Ferromagnetic semiconducting behavior is found in thioketone, pyrrolic‐N‐sulfide, thiopyran‐like dioxide, and N‐thionyl aniline functional groups. Results for the valence band maximum and conduction band minimum energies demonstrate that thiopyran‐like dioxide is energetically favorable to remove spin‐down electrons, whereas thioketone is energetically favorable to catch spin‐down electrons. This fact gives insight into future spin‐dependent electrochemistry studies on functionalized graphite materials. Results for lithium adsorption demonstrate that the donated charge by lithium and interatomic distance between Li and the functional groups are strongly dependent on the nature of the functional group.

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Fabrication and electrochemical behavior of vertically-aligned carbon nanotube electrodes covalently attached to p-type silicon via a thioester linkage

Cited by 14 publications

References 13 publications

Carbon Nanotubes Anchored to Silicon for Device Fabrication

Carbon Nanotubes Anchored to Silicon for Device Fabrication

Preparation and characterisation of vertically aligned single-walled carbon nanotube arrays on porous silicon

Edge Chemistry of Armchair Graphene Nanoribbons Containing Sulfur Functional Groups: Towards an Understanding of the Spin‐Dependent Electrochemistry

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