Fabrication and characterization of ZnO/Se1-xTex solar cells

Zheng, Jiajia; Fu, Liuchong; He, Yuming; Li, Kanghua; Lu, Yue; Xue, Jiayou; Liu, Yuxuan; Dong, Chong; Chen, Chao; Tang, Jiang

doi:10.1007/s12200-022-00040-5

Cited by 10 publications

(8 citation statements)

References 53 publications

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“…Given that ML models can accurately predict the band gaps and formation energies, a filtering process is applied to determine the dopants with the best potential to create stable and efficient PV devices. First, the doped BaZrS 3 perovskite must yield a band gap within the Shockley−Queisser limit (1− 1.5 eV), 38 and second, the perovskite must be structurally stable. Among all the 35 dopants investigated, only Ti at the B site and Ca at the A site are predicted to have a band gap within the Shockley−Queisser limit, while La and Ca at the A site and Y and Ti at the B site are expected to be energetically stable (Supporting Information Figure S2).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Machine Learning-Aided Band Gap Engineering of BaZrS₃ Chalcogenide Perovskite

Sharma

Ward

Bhimani

et al. 2023

ACS Appl. Mater. Interfaces

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The non-toxic and stable chalcogenide perovskite BaZrS3 fulfills many key optoelectronic properties for a high-efficiency photovoltaic material. It has been shown to possess a direct band gap with a large absorption coefficient and good carrier mobility values. With a reported band gap of 1.7–1.8 eV, BaZrS3 is a good candidate for tandem solar cell materials; however, its band gap is significantly larger than the optimal value for a high-efficiency single-junction solar cell (∼1.3 eV, Shockley–Queisser limit)thus doping is required to lower the band gap. By combining first-principles calculations and machine learning algorithms, we are able to identify and predict the best dopants for the BaZrS3 perovskites for potential future photovoltaic devices with a band gap within the Shockley–Queisser limit. It is found that the Ca dopant at the Ba site or Ti dopant at the Zr site is the best candidate dopant. Based on this information, we report for the first time partial doping at the Ba site in BaZrS3 with Ca (i.e., Ba1–x Ca x ZrS3) and compare its photoluminescence with Ti-doped perovskites [i.e., Ba(Zr1–x Ti x )S3]. Synthesized (Ba,Ca)ZrS3 perovskites show a reduction in the band gap from ∼1.75 to ∼1.26 eV with <2 atom % Ca doping. Our results indicate that for the purpose of band gap tuning for photovoltaic applications, Ca-doping at the Ba-site is superior to Ti-doping at the Zr-site reported previously.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Machine Learning-Aided Band Gap Engineering of BaZrS₃ Chalcogenide Perovskite

Sharma

Ward

Bhimani

et al. 2023

ACS Appl. Mater. Interfaces

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“…[75][76][77][78] 2) Both O or Zn dangling bonds on the ZnO surface can tightly bond with Se and Te because Zn-Se, Zn-Te, O-Te, and O-Se have very strong binding energy (Table S3, Supporting Information); 3) A slight reaction between ZnO and Te 0.7 Se 0.3 can form transition layer so that fewer defects exist at the interface of ZnO/Te 0.7 Se 0.3 (see our previous work). [79,80] According to the energy level position of ZnO, [79] the equilibrium band diagram of the device is shown in Figure 4b. There is no large transport barrier for photogenerated holes considering the work function of the Au (−5.10 eV), and an acceptable transport barrier for photogenerated electrons in terms of the wide-bandgap/narrow-bandgap heterojunction.…”

Section: Fabrication Of the Te 07 Se 03 Photodiodementioning

confidence: 99%

Te_xSe_1–x Photodiode Shortwave Infrared Detection and Imaging

Zheng

et al. 2023

Advanced Materials

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Short‐wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short‐wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal–oxide–semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low‐cost, high‐performance, and high‐stability TexSe1–x short‐wave infrared photodiode detector is reported. The TexSe1–x thin film is fabricated through CMOS‐compatible low‐temperature evaporation and post‐annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad‐spectrum response of 300–1600 nm, a room‐temperature specific detectivity of 1.0 × 1010 Jones, a −3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te‐based photodiode devices and a dark current density 7 orders of magnitude smaller than Te‐based photoconductive and field‐effect transistor devices. With a simple Si3N4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized TexSe1–x photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS‐compatible infrared imaging chips.

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“…Selenium thin-films are predominantly synthesized by evaporating an amorphous layer of selenium, followed by a thermal annealing process to crystallize the as-deposited film. [11][12][13][14][15] However, the temperature window leading to the highest power con- version efficiencies is fairly narrow, 16 and the high vapor pressure of selenium poses challenges in growing high-quality crystalline selenium thin-films without compromising the surface morphology and forming pinholes. 17,18 In 2017, D. M. Bishop et al demonstrated that annealing at suboptimal temperatures significantly reduces the collection efficiency of charge carriers excited by longer wavelength photons.…”

Section: Introductionmentioning

confidence: 99%

Laser-Annealing and Solid-Phase Epitaxy of Selenium Thin-Film Solar Cells

Nielsen,

Hemmingsen,

Bonczyk

et al. 2023

ACS Appl. Energy Mater.

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Selenium has resurged as a promising photovoltaic material in solar cell research due to its wide direct bandgap of 1.95 eV, making it a suitable candidate for a top cell in tandem photovoltaic devices. However, the optoelectronic quality of selenium thin-films has been identified as a key bottleneck for realizing high-efficiency selenium solar cells. In this study, we present an approach for crystallizing selenium thin-films using laser-annealing as an alternative to the conventionally used thermal annealing strategy. By laser-annealing through a semitransparent substrate, a buried layer of high-quality selenium crystallites is formed and used as a growth template for solid-phase epitaxy. The resulting selenium thin-films feature larger and more preferentially oriented grains with a negligible surface roughness in comparison to thermally annealed selenium thin-films. We fabricate photovoltaic devices using this strategy and demonstrate a record ideality factor of n = 1.37, a record fill factor of FF = 63.7%, and a power conversion efficiency of PCE = 5.0%. The presented laser-annealing strategy is universally applicable and is a promising approach for crystallizing a wide range of photovoltaic materials where high temperatures are needed while maintaining a low substrate temperature.

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Fabrication and characterization of ZnO/Se1-xTex solar cells

Cited by 10 publications

References 53 publications

Machine Learning-Aided Band Gap Engineering of BaZrS₃ Chalcogenide Perovskite

Machine Learning-Aided Band Gap Engineering of BaZrS₃ Chalcogenide Perovskite

Te_xSe_1–x Photodiode Shortwave Infrared Detection and Imaging

Laser-Annealing and Solid-Phase Epitaxy of Selenium Thin-Film Solar Cells

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Fabrication and characterization of ZnO/Se1-xTex solar cells

Cited by 10 publications

References 53 publications

Machine Learning-Aided Band Gap Engineering of BaZrS3 Chalcogenide Perovskite

Machine Learning-Aided Band Gap Engineering of BaZrS3 Chalcogenide Perovskite

TexSe1–x Photodiode Shortwave Infrared Detection and Imaging

Laser-Annealing and Solid-Phase Epitaxy of Selenium Thin-Film Solar Cells

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Machine Learning-Aided Band Gap Engineering of BaZrS₃ Chalcogenide Perovskite

Machine Learning-Aided Band Gap Engineering of BaZrS₃ Chalcogenide Perovskite

Te_xSe_1–x Photodiode Shortwave Infrared Detection and Imaging