Fabrication and characterization of YBCO thin film on CeO2/a-plane sapphire substrate

Shirakawa, Makoto; Miura, Masashi; Ohazama, T.; Shingai, Y.; Saito, Atsushi; Mukaida, Masashi; Ohshima, Shigetoshi

doi:10.1016/j.physc.2004.02.227

Cited by 4 publications

(4 citation statements)

References 8 publications

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“…The lattice matching between CeO 2 and Al 2 O 3 has been studied. 5,6) The lattice mismatchings in CeO The Ra of the CeO 2 layers was first investigated using a DFM image with a size of 1 Â 1 mm 2 . The Ra values of the CeO 2 buffer in samples A and B were 4.2 and 0.41 nm, respectively.…”

Section: Crmentioning

confidence: 99%

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Crystal Growth of Magnetoelectric Cr₂O₃ Thin Film on Sapphire and SrTiO₃

Asada

Kenjirou

Iwata

et al. 2008

jjap

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Representative magnetoelectric (ME) material Cr 2 O 3 films were prepared on R-cut sapphire (R-Al 2 O 3 ) and SrTiO 3 (STO) substrates with the aim of applying them in perovskite oxide electronic devices. Cr 2 O 3 thin films were deposited using the DC-RF hybrid magnetron sputtering system at different substrate temperatures. When the R-Al 2 O 3 substrate temperature was 550 C, Bragg peaks ðn; " n n; 0; 2nÞ were observed. The full width at half maximum (FWHM) of the rocking curve was smallest at T s ¼ 550 C with a value of 0.52 . The grain size of Cr 2 O 3 increased with substrate temperature in the 400 -600 C range. The lengths of rectangular Cr 2 O 3 grains were in the ranges of 200 -600 nm along the ½ " 1 1101 direction and 100 -300 nm along the ½11 " 2 20 direction. Furthermore, Cr 2 O 3 films were deposited on SrTiO 3 (100) with CeO 2 buffer layers. The Cr 2 O 3 thin film deposited on the smooth CeO 2 buffer layers with the average roughness ðR a Þ ¼ 0:41 nm showed a c-axis orientation; moreover, a Cr 2 O 3 (0001)/CeO 2 (100) == STO(100) crystal relationship was obtained.

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Section: Crmentioning

confidence: 99%

“…In order to combine Cr 2 O 3 with a series of perovskite oxides devices, Cr 2 O 3 films should be deposited on STO with cubic CeO 2 buffer layers. [5][6][7] The purposes of this work are to optimize substrate temperature for sputtered Cr 2 O 3 films on R-Al 2 O 3 and to investigate film growth on STO with CeO 2 buffer layers.…”

Section: Introductionmentioning

confidence: 99%

Crystal Growth of Magnetoelectric Cr₂O₃ Thin Film on Sapphire and SrTiO₃

Asada

Kenjirou

Iwata

et al. 2008

jjap

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“…Aiga et al [2] reported that the performance of HTS hairpin microstrip filters on R-Al 2 O 3 substrates had been influenced by the orientation of hairpin resonators, and thus it was difficult to design microwave circuits. On the other hand, A-plane Al 2 O 3 ( [3,4]. In those papers, the HTS thin films on A-Al 2 O 3 exhibited higher surface resistance (R s ) values at 22 GHz above 60 K than HTS thin films on R-Al 2 O 3 .…”

Section: Introductionmentioning

confidence: 97%

Orientational control of CeO2 buffer layers on A-plane sapphire substrates for REBa2Cu3O7−σ thin films

Sakuma

Michikami

2010

Physica C: Superconductivity and its Applications

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“…Most of HTS circuits have been prepared on cubic perovskite substrates, SrTi0 3 (STO) or M gO. A crystal matching is not good between the substrate crystal and the trigonal Cr 2 0 3 • Cr 2 0 3 films should be deposited on STO substrates buffered by cubic Ce0 2 which has been studied for preparation of HTS thin films [4][5][6][7]. The purposes of this work are to optimize the substrate temperature for sputtered Cr 2 0 3 films on R-cut sapphire (10)(11)(12) and to investigate the film growth on Nb-SrTi0 3 (STO) with Ce0 2 buffer layers.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Magnetoelectric Cr2O3 Films for Application Single Flux Quantum Device

Asada¹,

Kenjirou²,

Yamada³

et al. 2007

Trans. Mat. Res. Soc. Japan

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Thin films of magnetoelectric (ME) materials are expected to be applied to novel superconducting devices as voltage-controlled magnetic/current sources and gates. As a representative ME material Cr 2 0 3 films were prepared on R-cut sapphire substrates by DC-RF hybrid magnetron sputtering. Strong Bragg diffraction peaks (n 0 -n 2n) from Cr 2 0 3 with a trigonal phase were observed. Then full width at half maximum of rocking curves of (10-12) was 0.58degrees in the film deposited on substrate of 500°C substrates. The surface morphology of the film prepared at 550°C was very smooth with a step and terrace structure. The steps height was same the lattice spacing of Cr 2 0 3 (10-12) planes. The Cr203 films deposited on Nb-SrTi0 3 (100) with Ce0 2 buffer layers revealed a-axis or c-axis oriented growth. The Ce02 buffer layer proceeded the growth of Cr 2 0 3 . A leakage current through the Cr 2 0 3 film was suppressed less than 10-5 A/cm 2 below the electric field of0.24MV/cm.

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Fabrication and characterization of YBCO thin film on CeO2/a-plane sapphire substrate

Cited by 4 publications

References 8 publications

Crystal Growth of Magnetoelectric Cr₂O₃ Thin Film on Sapphire and SrTiO₃

Crystal Growth of Magnetoelectric Cr₂O₃ Thin Film on Sapphire and SrTiO₃

Orientational control of CeO2 buffer layers on A-plane sapphire substrates for REBa2Cu3O7−σ thin films

Fabrication of Magnetoelectric Cr2O3 Films for Application Single Flux Quantum Device

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Fabrication and characterization of YBCO thin film on CeO2/a-plane sapphire substrate

Cited by 4 publications

References 8 publications

Crystal Growth of Magnetoelectric Cr2O3 Thin Film on Sapphire and SrTiO3

Crystal Growth of Magnetoelectric Cr2O3 Thin Film on Sapphire and SrTiO3

Orientational control of CeO2 buffer layers on A-plane sapphire substrates for REBa2Cu3O7−σ thin films

Fabrication of Magnetoelectric Cr2O3 Films for Application Single Flux Quantum Device

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Crystal Growth of Magnetoelectric Cr₂O₃ Thin Film on Sapphire and SrTiO₃

Crystal Growth of Magnetoelectric Cr₂O₃ Thin Film on Sapphire and SrTiO₃