We report a remarkable increase in critical current density (J
c) by oxygen post-annealing for only a few tens of minutes in ErBa2Cu3O
y
films fabricated at two different pulsed-laser-deposition (PLD) temperatures of 720°C and 760°C. The J
c of these films were obviously enhanced to more than 1 MA·cm-2 in the annealing temperature range of 350°C–500°C in comparison with those of the as-deposited films (0.3–0.5 MA·cm-2). Even in a nonequilibrium process such as the PLD method, the homogenization of oxygen contents in films is crucial for enhancement of the films' critical current properties, which suggests that oxygen post-annealing is a practical process for improvement of critical current of PLD-REBa2Cu3O
y
coated conductors.
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