Fabrication and characterization of solution processed Al/Sn:ZnO/p-Si photodiodes

Rüzgar, Şerif; Çağlar, Müjdat

doi:10.1016/j.mssp.2020.105076

Cited by 19 publications

(4 citation statements)

References 62 publications

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“…As seen, the n, ϕb and RR values of the produced SMA-photodiode are found changed by the light effect. These changes occurred most propably because of the carrier generationrecombination induced by the incident luminous effect and the effect of interface states in the interface of CuAlNi/n-Si Schottky contact [28,45].…”

Section: Intensity (Au) 2q (°)mentioning

confidence: 99%

Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Karaduman¹,

Canbay

2022

Turkish Journal of Science and Technology

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Micro/nano scale thin-film shape memory alloys (SMAs) have been used in many different miniaturized systems. Using them as thin-film metal components in fabrication of Schottky photodiodes has started a few years ago. In this work, a new SMA-photodiode device with CuAlNi/n-Si/Al structure was produced by coating nano-thick CuAlNi SMA film on n-Si wafer by thermal evaporation. The photoelectrical I-V, I-t and C-V photodiode characterization tests were carried out at room temperature under dark and different artifical light power intensities. It was observed that the new device exhibited photoconductive, photovoltaic and capacitive behaviors. By using the obtained data, the ideality factor (n) and barrier height (ϕb) were determined by conventional I-V method. The photodiode performance parameters of responsivity (Rph), photosensivity (%PS) and spesific detectivity (D*) were determined as good figure of merits. The current conduction mechanism analysis revealed that the space charge limited conduction (SCLC) mechanism is the dominant current conduction mechanism. By the drawn reverse squared C-2-V plots, the values of donor concentration (ND), diffusion potential (Vd), Fermi level (EF) and also barrier height (ϕb) were determined for the SMA-photodiode. The results indicated that the new SMA-photodiode device can be useful in optoelectronic communication systems and photosensing applications.

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Section: Intensity (Au) 2q (°)mentioning

confidence: 99%

Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Karaduman¹,

Canbay

2022

Turkish Journal of Science and Technology

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“…ZnO has an exciting binding energy of 60 mV, which can be consider as partially high value with a wide direct band gap around 3.37 eV. [6][7][8] The unique properties of ZnO including a photochemical stability, high absorption UV-VIS region (280-400 nm), strong room temperature luminescence and high electron mobility are widely applicable in variety potential applications such as UV photo detectors, sensors and light emitting diodes also it can be used as antireflection coating, transparent conducting electrode and window layer to create the np-injunction in solar cell devices. several preparation techniques have been employed and going on in development as promising methods to synthesis and fabricate many types and form of ZnO nano structures such as thin films, nanoparticles, roads, weirs fiber and etc.…”

Section: Introductionmentioning

confidence: 99%

Single Crystalline Zinc Oxide Nanorods Grown by R-F Sputtering Technique Onto P-Si Substrate for Sensing Applications

Aljameel

2022

Mat. Sci. Res. India

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A high-quality, single-crystal ZnO nanorod thin film was successfully deposited onto p-type monocrystalline silicon (P-Si) substrates using an RF sputtering technique. An XRD analysis of ZnO nanorods was carried out to investigate crystallinity and aspect ratio of the deposited thin film. Adjusting deposition conditions makes it possible to grow single-crystalline ZnO nanorods with preferred orientations (002) on the substrate. More than the substrate type, crystal size is determined by single-crystal growth conditions. These sample had the exact. With the exception of a small variance at Raman shifts 414 cm-1, which correspond to E2. Raman spectra measurements with a slight variation at Raman shifts 414 cm-1, corresponding to E2 (high). In response to the compressive stress, the peak shifts upwards (blue dress). Data from FE-SEM shows vertical growth of hexagonal prism. Finally, the hall effect measurement and UV-vis spectroscopy were carried out the electrical and optical properties of the sample respectively.

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“…The intrinsic defects, such as oxygen vacancies, may also be reduced by high temperature annealing in O 2 or Argon (Ar) [11]. Therefore, electrical and optical properties of ZnO/Si heterojunction may be modulated by controlling the ZnO nanorods growth temperature, annealing temperature, and atmosphere [9], [14].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

Faraz

Jafri

Tajvar

et al. 2021

ELEKTRON ELEKTROTECH

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The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.

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Fabrication and characterization of solution processed Al/Sn:ZnO/p-Si photodiodes

Cited by 19 publications

References 62 publications

Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Single Crystalline Zinc Oxide Nanorods Grown by R-F Sputtering Technique Onto P-Si Substrate for Sensing Applications

Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

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