Fabrication and characterization of quantum wire transistors with Schottky in-plane gates formed by an in situ electrochemical process

Abstract

Effects of etch-induced damage on the electrical characteristics of in-plane gated quantum wire transistors Fabrication of a nanoscale, in-plane gated quantum wire by low energy ion exposure J. Vac. Sci. Technol. B 12, 8 (1994); 10.1116/1.587114 In-plane-gated quantum wire transistor fabricated with directly written focused ion beams Novel Schottky in-plane gate ͑IPG͒ quantum wire transistors were fabricated for the first time, and their transport properties were investigated. For fabrication of transistors, an AlGaAs/GaAs quantum well wire ͑QWW͒ was produced by etching, and platinum IPG electrodes were directly formed on both edges of the QWW by a new in situ electrochemical process. The current-voltage ͑I -V͒ characteristics of the fabricated long-channel and short-channel devices exhibited good field effect transistor operation at 3-300 K. Simple theoretical models assuming either a constant mobility or a constant velocity were developed. They provide a reasonably good phenomenological description of the observed I -V characteristics. Limitations of the models are also discussed. At low temperatures, the short-channel device exhibited sharp quantized conductance steps in the units of 2e 2 /h near pinch-off, indicating one-dimensional ballistic quantum transport. The first plateau of the conductance step remained visible up to 40 K, which is the highest reported so far for the AlGaAs/ GaAs system.

Novel in-plane gate devices on hydrogenated diamond surfaces

“…As can be seen in Fig. 3, the saturation drainsource current depends linearly on U GS , as predicted by the velocity saturation model [9]:…”