“…This contributes to the quasi-Fermi-level split and hence enhances photocurrent of solar cells without degradation of voltage [ [5] , [6] , [7] ]. The utilization of self-assembled QDs for IBSCs has been proposed owing to the unique quantized energy levels and a breakdown of the selection rule, and InAs/GaAs QDs are widely researched because of the mature fabrication technology and excellent optical property [ [8] , [9] , [10] , [11] , [12] , [13] , [14] , [15] ]. Unfortunately, the previous InAs/GaAs QDSCs usually exhibit deteriorative open-circuit voltage ( V OC ) because the intraband optical transition is replaced by carrier thermal escape at room temperature (RT) [ [16] , [17] , [18] ].…”