Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition

A simulation study of irradiation effect on InAs/GaAsSb type II quantum dot structures

“…Specifically, for the InAs/GaAsSb QDSC, it begins to exhibit a type II band structure when the content of Sb exceeds 14 % [ 19 , 20 ]. A conversion efficiency of 17.31 % is achieved when the Sb content reaches 18 % [ 21 ]. The carrier lifetime can be further prolonged by adding a GaAs interlayer between the InAs QDs and GaAsSb layers [ 22 ].…”