Fabrication and characterization of “on-edge” molecular junctions for molecular electronics

Abstract

A high throughput fabrication method of molecular junctions with a typical area of 0.005–0.01μm2 is presented. The small size is determined by one optical lithography step. The structure of junctions is metal-SAM-metal, where SAM is a self-assembled molecular layer with <105 molecules. The effect of attributes such as temperature, type of metal films, and molecular structure of the SAM on the I-V characteristics of the junctions is found to be in agreement with previous results and theoretical predictions. The prospect advantages of the junctions for future research are also mentioned.

Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications

“…6B). [177] The top electrode (either Ag or Au) was vapor-deposited at reduced temperatures and at a 608 angle to create the edge structure. Conduction through the conjugated BPDT SAM was determined to be via tunneling, despite the larger currents and smaller HOMO-LUMO gap than in the C 9 SAM.…”

Formation of 2-D Crystalline Intermixed Domains at the Molecular Level in Binary Self-Assembled Monolayers from a Lyotropic Mixture

“…The control of the spatial confinement of individual functional molecules and nano-objects on surfaces is a highlight topic in studying single-molecule properties, such as reactivity and kinetics, and provides new insights into the design of molecular switches and motors, opening new applications in the field of biochemical sensors, molecular electronics, catalysis, and surface material chemistry. − …”

Molecular Transport Junctions Created By Self‐Contacting Gapped Nanowires

“…To realize the promise of molecular electronic devices, methods must be developed for creating molecular transport junctions (MTJs), tiny gaps between electrodes connected with molecules, in a straightforward and reproducible fashion . Many approaches to synthesize MTJs have been proposed, based on nanopores, scanning probes, liquid metals, wire crossings, electromigration, break junctions, on‐edge junctions, cross bars, and on‐wire lithography (OWL) . OWL is a particularly attractive method for fabricating MTJs because it can be used to rapidly and routinely create sub‐5 nm gaps along the long axis of the wire in a high‐throughput fashion.…”