Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications

Abstract

Articles you may be interested inInfluence of work-function of top electrodes on the photovoltaic characteristics of Pb0.95La0.05Zr0.54Ti0.46O3 thin film capacitors Appl. Phys. Lett. 100, 173901 (2012); 10.1063/1.4705425 ( Na 0.5 Bi 0.5 ) 0.87 Pb 0.13 Ti O 3 thin films on different substrates for ferroelectric memory applications Fabrication and characterization of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Dy 2 O 3 )semiconductor capacitors for nonvolatile memory applications The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors J. Appl. Phys. 98, 044103 (2005);Metal-ferroelectric-insulator-semiconductor thin-film capacitors with Pb͑Zr 0.6 ,Ti 0.4 ͒O 3 ͑PZT͒ ferroelectric layer and high-k lanthanum oxide ͑La 2 O 3 ͒ insulator layer were fabricated. The outdiffusion of atoms between La 2 O 3 and silicon was examined by the secondary-ion-mass spectroscopy. The size of memory window as a function of PZT annealing temperature was discussed. The maximum memory window saturated to 0.7 V, which is close to the theoretical memory window ⌬W Ϸ 2d f E c Ϸ 0.8 V with higher annealing temperatures above 700°C. The memory window starts to decrease due to charge injection when the sweep voltage is higher than 5 V at 600°C-annealed samples. The C-V flatband voltage shift ͑⌬V FB ͒ as a function of charge injection was characterized in this work. An energy band diagram of the Al/ PZT/ /La 2 O 3 / p-Si system was proposed to explain the memory window and the flatband voltage shift.

Boosting the thermoelectric performance of Bi2O2Se by isovalent doping

“…This La‐rich dark region can be concluded to be La 2 O 3 secondary phase in accordance with the XRD results. Since La 2 O 3 is an insulator, which may be harmful to the electrical conductivity and thermoelectric performance.…”

The electrical and switching properties of a metal-ferroelectric (Bi3.15Nd0.85Ti3O12)-insulator (Y2O3-stabilized ZrO2)-silicon diode

“…No hysteresis loops are observed, which indicates a good YSZ/Si interface, and negligible charge injection and ion drift effects. 5,[15][16][17] The memory window can be expressed as follows: The leakage current of YSZ at 1 V is about 7.5ϫ 10 −9 A, which indicates that the insulating property of the YSZ layer satisfies the requirement of this work.…”

“…3 The I-V curves of Pt/BNT/Si and Pt/BNT/YSZ/Si diodes are shown in Fig. 5,18 The energy band diagram 19 face. The leakage current of Pt/BNT/YSZ/Si diode is smaller than that of Pt/BNT/Si diode, which will contribute to the longer retention time.…”

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

“…In the case of MFIS structure, a very thin insulating layer, namely buffer layer, is expected to prevent the chemical reaction and/or inter-diffusion between the ferroelectric film and silicon substrate, and thus improve the interface properties and the retention properties [6,7]. Even so, high quality MFIS FETs with good retention properties have been found arduous to fabricate because of the difficulty in selecting appropriate ferroelectric and dielectric materials [8], [9].…”