Fabrication and Characterization of Low-Threshold Polarization-Stable VCSELs for Cs-Based Miniaturized Atomic Clocks

Miah, Md. Jarez; Al-Samaneh, Ahmed; Kern, Alexander; Wahl, Dietmar; Debernardi, Pierluigi; Michalzik, Rainer

doi:10.1109/jstqe.2013.2247697

Cited by 43 publications

(14 citation statements)

References 16 publications

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“…1(b), along with a microwave source V s and the source output impedance Z 0 (50 ). The load impedance [13], [17] of the electrical equivalent circuit is: Fig. 2.…”

Section: Equivalent-circuit Model For Our Vcselsmentioning

confidence: 99%

Temperature-Dependent Impedance Characteristics of Temperature-Stable High-Speed 980-nm VCSELs

Lott

Wolf

et al. 2015

IEEE Photon. Technol. Lett.

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The temperature dependence of the impedance characteristics of high bit rate, highly temperature-stable 980-nm oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) is investigated. A small-signal equivalent circuit model is fitted to measured small-signal reflection S11 and S21 scattering parameters across a large range of operating bias currents, temperatures, and oxide-aperture diameters to extract the circuit elements, −3 dB modulation bandwidth, relaxation resonance frequency, and parasitic cutoff frequency for each particular operating condition. The parasitic cutoff frequency of our small oxide-aperture diameter VCSELs is highly temperature insensitive from room temperature up to 85°C, and does not limit our VCSELs' maximum data transmission rate. Finally, the dependence of the impedance characteristics and modulation bandwidth of our VCSELs on the oxide-aperture diameter is analyzed at 25°C and 85°C. The larger capacitance is the main reason of our larger aperture VCSELs, compared with smaller aperture VCSELs, have a lower parasitic cutoff frequency.

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“…1(b), along with a microwave source V s and the source output impedance Z 0 (50 ). The load impedance [13], [17] of the electrical equivalent circuit is: Fig. 2.…”

Section: Equivalent-circuit Model For Our Vcselsmentioning

confidence: 99%

Temperature-Dependent Impedance Characteristics of Temperature-Stable High-Speed 980-nm VCSELs

Lott

Wolf

et al. 2015

IEEE Photon. Technol. Lett.

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“…10 Additionally, the ability to fabricate single mode VCSELs is not only a benefit for data transmission but also makes VCSELs highly sensitive devices for atomic clocks. [11][12][13][14][15] Finally, because VCSELs have emission normal to the substrate, they can be fabricated into high density 2D arrays, making III-nitride VCSELs ideal for visible and UV-A applications requiring high power density emission, including pico-projectors, 16 micro-displays, [17][18][19][20] backlighting for small electronics, 21 laser based lighting, [22][23][24] and bio-sensing. 25 In the arsenides, high power VCSEL arrays are now being manufactured to yield 9.6 kW emission for rapid industrial heating, proving the potential for these low power devices to yield high power arrays.…”

mentioning

confidence: 99%

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Leonard

Cohen

Yonkee

et al. 2015

Applied Physics Letters

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We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 6.95-λ total cavity thickness. These advances yield a single longitudinal mode 406 nm nonpolar VCSEL with a low threshold current density (∼16 kA/cm2), a peak output power of ∼12 μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

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“…Indeed, we use (1) for: 1) our single VCSELs; 2) the individual emitters of a given array; and 3) the combined emission of one of our small, triple or septuple VCSEL arrays. We find also interestingly that we may fit our S11 data for our triple VCSEL arrays to a basic lumped-circuit model for a single VCSEL, such as the model given in [4]. These results we will report elsewhere after further analysis.…”

Section: Dynamic Characteristicsmentioning

confidence: 53%

40 Gbps With Electrically Parallel Triple and Septuple 980 nm VCSEL Arrays

Haghighi

Moser

Lott

2020

J. Lightwave Technol.

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Electrically parallel and optically uncoupled triple and septuple oxide confined vertical-cavity surface-emitting laser (VCSEL) arrays emitting at about 980 nm where each VCSEL has an oxide aperture diameter (φ) of ∼7.5 μm transmit data at 40 Gbps at room temperature (RT) in a back-to-back test configuration using standard two-level non-return-to-zero pulse amplitude modulation at bias current densities (J) of 17.4 and 10.3 kA/cm 2 , respectively. Reference single VCSELs processed with the VCSEL arrays on the same wafer pieces with φ ∼7.5, 13.5, and 19.5 μm transmit data at up to 45, 40, and 35 Gbps at RT at J of 20.4, 13.3, and 10.7 kA/cm 2 , respectively, where the latter two single VCSELs have total emitting areas nearly equal to the total additive emitting areas of the triple and septuple VCSEL arrays, respectively. The RT optical output power at J ∼10 and 15 kA/cm 2 is 11.4 and 17.2 mW for the triple arrays and 31.1 and 45.9 mW for the septuple arrays, respectively. By increasing the number of emitters in an array for a fixed φ per VCSEL from 3 to 7 we increase the total optical output power and simultaneously we decrease the J required for error free digital data transmission at 40 Gbps.

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Fabrication and Characterization of Low-Threshold Polarization-Stable VCSELs for Cs-Based Miniaturized Atomic Clocks

Cited by 43 publications

References 16 publications

Temperature-Dependent Impedance Characteristics of Temperature-Stable High-Speed 980-nm VCSELs

Temperature-Dependent Impedance Characteristics of Temperature-Stable High-Speed 980-nm VCSELs

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

40 Gbps With Electrically Parallel Triple and Septuple 980 nm VCSEL Arrays

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