Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Hiramatsu, Kazumasa; Nishiyama, K.; Onishi, Masahiro; Mizutani, H.; Narukawa, Mitsuhisa; Motogaito, Atsushi; Miyake, Hideto; Iyechika, Yasushi; Maeda, Takuya

doi:10.1016/s0022-0248(00)00707-7

Cited by 402 publications

(318 citation statements)

References 32 publications

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“…This limits the substrate size to a square of 10×10 mm 2 (ref. [5][6][7], and thus is extremely expensive. Therefore, it would be impractical for industry.…”

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confidence: 99%

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

et al. 2016

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We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO2 mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

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“…This limits the substrate size to a square of 10×10 mm 2 (ref. [5][6][7], and thus is extremely expensive. Therefore, it would be impractical for industry.…”

mentioning

confidence: 99%

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

et al. 2016

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“…This general behavior is also found for dislocations initially oriented along the [0001] growth direction if inclined facets appear during growth of GaN epitaxial layers. The dislocations then bend toward the inclined facet, [19][20][21]23,25,26,65 in order to minimize the line energy by shortening its length. Note, the dislocations in the cleaved samples likely do not reach their equilibrium line directions after cleavage at room temperature.…”

Section: Determination Of the Depth Of The Dislocation Corementioning

confidence: 99%

“…18 Therefore, the need to reduce the dislocation concentrations has led to growth schemes, where the dislocation lines are bent off the growth direction. [19][20][21][22][23][24][25][26] Hence, most dislocations are not present in their original line direction and may thus change their electronic properties. Therefore, it is particularly relevant to be able to identify the line direction of the dislocation cores.…”

Section: Introductionmentioning

confidence: 99%

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Weidlich

Schnedler

Portz

et al. 2015

Journal of Applied Physics

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A methodology for the determination of the subsurface line direction of dislocations using scanning tunneling microscopy (STM) images is presented. The depth of the dislocation core is derived from an analysis of the displacement field measured by STM. The methodology is illustrated for dislocations at GaN(10 10) cleavage surfaces. It is found that the dislocation line bends toward the surface, changing from predominantly edge-type to more screw-type character, when approaching the intersection point. Simultaneously, the total displacement detectable at the surface increases due to a preferred relaxation towards the surface. V C 2015 AIP Publishing LLC.

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“…Compared to the utilization of expensive semi-polar substrates and large-amount dislocations obtained from foreign substrates, epitaxial lateral overgrowth (ELO) technique provides a promising method to obtain the semi-polar surface of III-nitride semiconductors with less dislocations. 5,6 III-nitride materials grown by ELO can be influenced by many complicated factors, such as growth parameters, the crystallographic orientation of patterned windows, and the distribution of dislocations or defects in the crystal. [7][8][9] One critical problem in ELO for InGaN/GaN heterostructures is the inhomogeneous spatial distribution of indium composition along the surface due to individual diffusion behavior of the metal atoms (In and Ga) during the epitaxial growth process of InGaN layer.…”

mentioning

confidence: 99%

“…1. [14][15][16] In order to investigate the diffusion of the metal atoms, stripes with asymmetric spatial dislocation distribution were also fabricated by introducing uneven GaN/sapphire substrate intentionally. Fig.…”

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confidence: 99%

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

et al. 2015

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The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, which influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.

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Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Cited by 402 publications

References 32 publications

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

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