Fabrication and characterization of InGaN/GaN MQWs blue light-emitting diodes on sapphire substrate

Abstract

In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on cplane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MOCVD) system. The threshold voltage (V th ) of fabricated InGaN/GaN MQWs blue LED on c-plane sapphire substrate was ~ 3.1 V.

Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode

“…alloy, the indium relative content reported ranges from = ( − ) x 0.13 0.21 for emissions between λ = ( − ) 440 460 nm. 2,11,17,18,[24][25][26][27][28][29] For this work, a low indium content was chosen ( = x 0.15), resulting in a wavelength about of λ = 456 nm. The above is because the increase of x implies an increase in indium agglomeration, which produces phase separation in the alloy; 30,31 as well as an increase in the lattice strain, raising the defect density.…”