Abstract:This letter presents performance comparison between a GaAs/mirror/copper thin-film solar cell and a conventional GaAs solar cell with a thick GaAs substrate. The GaAs thin-film solar cell was fabricated by transferring a GaAs solar cell onto a AuGe/Au mirror-coated copper substrate. With the aid of the excellent copper conductor, the thin-film solar cell exhibits significant improvement in both open-circuit voltage and short circuit current density. The improved current-voltage (I-V) performance of the thin-fi… Show more
“…Using the structure in this study, the J sc can be increased after mechanical stacking. The light reflected toward the top absorber layer was demonstrated in our previous study 30 .Figure 3J–V characteristics of ( a ) GaInP/GaAs//Si and ( b ) GaInP/GaAs// InGaAs TJ solar cells measured using a one-sun AM1.5G light source. They were measured under the individually fabricated dual-, single-, and stacked junctions.…”
The integration of III–V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficult to obtain high-efficiency solar cells grown as epilayers on Si and InP substrates. In this paper, two types of devices, including GaInP/GaAs stacked on Si (GaInP/GaAs//Si) and GaInP/GaAs stacked on InGaAs (GaInP/GaAs//InGaAs), are fabricated via mechanical stacking and wire bonding technologies. Mechanically stacked GaInP/GaAs//Si and GaInP/GaAs//InGaAs triple-junction solar cells are prepared via glue bonding. Current-voltage measurements of the two samples are made at room temperature. The short-circuit current densities of the GaInP/GaAs//Si and GaInP/GaAs//InGaAs solar cells are 13.37 and 13.66 mA/cm2, while the open-circuit voltages of these two samples are measured to be 2.71 and 2.52 V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is relatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction solar cell alone. This study demonstrates the high potential of combining mechanical stacked with wire bonding and ITO films to achieve high conversion efficiency in solar cells with three or more junctions.
“…Using the structure in this study, the J sc can be increased after mechanical stacking. The light reflected toward the top absorber layer was demonstrated in our previous study 30 .Figure 3J–V characteristics of ( a ) GaInP/GaAs//Si and ( b ) GaInP/GaAs// InGaAs TJ solar cells measured using a one-sun AM1.5G light source. They were measured under the individually fabricated dual-, single-, and stacked junctions.…”
The integration of III–V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficult to obtain high-efficiency solar cells grown as epilayers on Si and InP substrates. In this paper, two types of devices, including GaInP/GaAs stacked on Si (GaInP/GaAs//Si) and GaInP/GaAs stacked on InGaAs (GaInP/GaAs//InGaAs), are fabricated via mechanical stacking and wire bonding technologies. Mechanically stacked GaInP/GaAs//Si and GaInP/GaAs//InGaAs triple-junction solar cells are prepared via glue bonding. Current-voltage measurements of the two samples are made at room temperature. The short-circuit current densities of the GaInP/GaAs//Si and GaInP/GaAs//InGaAs solar cells are 13.37 and 13.66 mA/cm2, while the open-circuit voltages of these two samples are measured to be 2.71 and 2.52 V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is relatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction solar cell alone. This study demonstrates the high potential of combining mechanical stacked with wire bonding and ITO films to achieve high conversion efficiency in solar cells with three or more junctions.
“…In the reverse piezoelectric effect, the application of an electric field in the crystal causes mechanical changes in the structure such as vibration. [35][36][37][38][39][40] Therefore, piezoelectricity is a linear relationship between electrical and mechanical properties, and in this research, we intend to use the advantages of this effect to convert the energy and heat of the sun into electricity.…”
Solar cells are electronic devices that convert sunlight into electrical energy. Also, solar cells are known as a clean and renewable energy source. In this paper, for the first time, a new method with closed-form analytical equations is presented for the detailed analysis of a specific solar cell structure based on MEMS (micro-electromechanical system) technology. The proposed method is a comprehensive and complete analytical method, which is applicable and valid for all solar cell structures based on a two-layer cantilever with any piezoelectric. Also, using the proposed analytical method, closed relationships for calculating the open circuit voltage and other important parameters of this type of solar cells based on MEMS technology have been presented. With this proposed method, complex simulation tools will no longer be needed to calculate the open circuit voltage and other important parameters of solar cells with two-layer cantilevers. Also, the proposed closed-form relationships help designers to understand the design compromises and design the two-layer cantilever-based solar cell for their specific and desired conditions. To show the high validity of the proposed method, the simulation results have been compared with the theoretical results. In this comparison, the simulation results and the theoretical results are very close to each other or almost equal. Also, the proposed structure has been numerically simulated using Comsol software.
“…Laser lift-off [2], chemical lift-off [3] and mechanical spalling [4] allow for efficient release of III-V epilayers, e.g. GaAs [5] [6] and InP [7] based structures, from the native substrate and their transfer onto lightweight and flexible receiving substrates.…”
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