Organic triplet-state light-emitting materials (organic phosphorophores) have been one of the most important recent developments in the field of organic light-emitting diodes (OLEDs).[1±4] Organic electrophosphorescent materials provided one of the major breakthroughs in electroluminescence efficiency, which is usually limited to an external quantum efficiency (EQE) of around 5 % for devices based on singletstate fluorescent materials. Owing to its thin-film, lightweight, fast-response, wide-viewing-angle, high-contrast, and low-power attributes, OLEDs promise to be one of the major flat- [16±20]However, the development of highly efficient blue-light-emitting phosphorescent emitters in OLEDs, indispensable for the realization of RGB full-color displays and WOLEDs, is still in its infancy, and blue-light-emitting phosphorescent EL performance lags far behind that of the green-or red-light emitters.One of the best known triplet-state blue-light emitters is iridium(III) bis(4,6-difluorophenylpyridinato)picolate (FIrpic, Scheme 1).[21±23] Although a reasonably good EQE of about 10 % (or 10 lm W ±1 ) has been reported, its blue-light emission was far from saturated, with 1931 Commission Internationale de L'Eclairage x,y coordinates (CIE x,y ) of (0.17, 0.34) [23] thatwere best characterized as cyan in color. The most recent, and probably only the second phosphorescent blue emitter of practical use, was iridium(III) bis(4¢,6¢-difluorophenylpyridinato)tetrakis(1-pyrazolyl) borate) (FIr6), [24] whose blue OLED showed EQEs of 9±10 % (or 11±14 lm W ±1 ), and whose bluecolor chromaticity had been considerably improved to CIE x,y = 0.16, 0.26. There are a couple of limitations in the usage of phosphorescence-based materials for OLEDs. Compared with the short emission lifetime (scale of nanoseconds) of fluorescent materials, the relatively long phosphorescence lifetimes (microseconds scale) of the iridium complexes may lead to dominant triplet±triplet (T 1 ±T 1 ) annihilation at high currents. Long emission lifetimes also cause a long range of exciton diffusion (> 100 nm) that could get quenched in the adjacent layers of materials in the OLED. Consequently, organic phosphorescent materials are often adopted as dopants dispersed in a suitable host material, usually of high bandgap energies and good carrier transport properties. Arylamino-containing organic substances are usually the host materials of choice to alleviate this situation. This has worked reasonably well for phosphorescent green-or red-light-emitting materials. However, it has been demonstrated that the energy differences in the triplet energies of host and guest materials are very important for the confinement of electro-generated triplet excitons on the dopant molecules.[22±28] In cases of triplet-state bluelight emitters, common arylamino-containing substances, such as 4,4¢-bis(9-carbazolyl)-2,2¢-biphenyl (CBP) simply do not have sufficient triplet-state energy for effective T 1 ±T 1 energy transfer; later, a structurally modified host molecule, 1,3-bis(9-carba...

Psoriasis was associated with a higher risk of developing CKD and GN. High severity, psoriatic arthritis involvement and concomitant NSAIDs use further increased the risk of CKD in patients with psoriasis.

We have developed highly efficient white top-emitting organic light-emitting devices (TOLEDs) with broad emission by modifying both anode and cathode. To alleviate the undesirable microcavity effect and obtain "broad" white emission, CF xcoated Ag anode with modified reflectivity and an index-matching layer (SnO 2 ) capped on thin Ca/Ag cathode with a maximal transparency of 80% were employed. A top-emitting broad white light device based on the dual layer architecture of light blue and yellow emitters with one of the highest EL efficiencies of 22.2 cd/A (9.6 lm/W) at 20 mA/cm 2 and 7.3 V with Commission Internationale d'Eclairage (CIE) coordinates of (x＝0.31, y＝ 0.47) has been demonstrated.

The integration of III–V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficult to obtain high-efficiency solar cells grown as epilayers on Si and InP substrates. In this paper, two types of devices, including GaInP/GaAs stacked on Si (GaInP/GaAs//Si) and GaInP/GaAs stacked on InGaAs (GaInP/GaAs//InGaAs), are fabricated via mechanical stacking and wire bonding technologies. Mechanically stacked GaInP/GaAs//Si and GaInP/GaAs//InGaAs triple-junction solar cells are prepared via glue bonding. Current-voltage measurements of the two samples are made at room temperature. The short-circuit current densities of the GaInP/GaAs//Si and GaInP/GaAs//InGaAs solar cells are 13.37 and 13.66 mA/cm2, while the open-circuit voltages of these two samples are measured to be 2.71 and 2.52 V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is relatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction solar cell alone. This study demonstrates the high potential of combining mechanical stacked with wire bonding and ITO films to achieve high conversion efficiency in solar cells with three or more junctions.

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