2014
DOI: 10.1088/0022-3727/47/6/065106
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Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes

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Cited by 36 publications
(17 citation statements)
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“…Room-temperature value of ideality factor obtained for the p-CuO/n-Si heterojunction has been found as 4.2 in the voltage range of 0.5-1 V. The value of ideality factor for an ideal diode should be in between 1 and 2; however, this high value of the ideality factor can account for the strong parasitic generation, surface state-induced recombination and SiO 2 layer formed at the interface [37]. Figure 6 shows the I-V characteristics of the different p-CuO/n-Si heterojunction solar cells measured under the illumination of 200 W halogen lamp.…”
Section: Photoresponse Studymentioning
confidence: 92%
“…Room-temperature value of ideality factor obtained for the p-CuO/n-Si heterojunction has been found as 4.2 in the voltage range of 0.5-1 V. The value of ideality factor for an ideal diode should be in between 1 and 2; however, this high value of the ideality factor can account for the strong parasitic generation, surface state-induced recombination and SiO 2 layer formed at the interface [37]. Figure 6 shows the I-V characteristics of the different p-CuO/n-Si heterojunction solar cells measured under the illumination of 200 W halogen lamp.…”
Section: Photoresponse Studymentioning
confidence: 92%
“…The lower oxidation state, copper (I) oxide (Cu 2 O), appears red in color and has a bulk band gap near 2.1 eV, 1 whereas the higher oxidation state, copper (II) oxide (CuO), is black with a bulk band gap at approximately 1.85 eV. 1 Optically absorbing in the ultraviolet (UV) and visible spectral range, these materials are useful for a number applications including photovoltaic devices, 2-4 photodetectors, 5 and photocatalysis. 6 Furthermore, copper oxides can be used for gas sensors, 7,8 enzyme-free glucose sensors, 9 lithium ion batteries, 10 and supercapacitors.…”
Section: Introductionmentioning
confidence: 99%
“…ACCEPTED MANUSCRIPT 3 implantation of metal and oxygen ions or one-step solid state reaction method at room temperature [8,13,14]. The CuO film can also be obtained by employing thermal oxidation, electro-deposition, chemical conversion, chemical brightening, spraying, chemical vapour deposition, plasma evaporation, reactive sputtering and molecular beam epitaxy technique [8,9,12,15].…”
Section: Accepted Manuscriptmentioning
confidence: 99%
“…The relatively smaller band gap of CuO makes it a potentially superior material for photo-detection and optical switching applications in the visible or near-infrared region in comparison to other large band-gap metal oxides [12,13]. Reports are available on the development of CuO based renewable energy technologies by exploiting its efficient solar absorbance and low thermal emittance properties [9,[13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%