Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications

Sultana, Jenifar; Das, Anindita; Das, Avishek; Saha, Nayan Ranjan; Karmakar, Anupam; Chattopadhyay, Sanatan

doi:10.1016/j.tsf.2016.06.022

Cited by 31 publications

(6 citation statements)

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“…The fill factor can be calculated using the formula , where J m and V m are the current and voltage, respectively, at maximum power point of the J – V curve. The power conversion efficiency is calculated as , where P in is the incident power of the input light.…”

Section: Resultsmentioning

confidence: 99%

“…Under such circumstances, along with Si, metal oxide semiconductors have been considered as the most promising candidates for next-generation solar cells owing to their unique physical and optoelectronic properties, nontoxicity, stability, cost-effectiveness, and facile fabrication process. In spite of having many advantages, metal oxide based solar cells suffer from very low conversion efficiency and hence have become a recent focus of fundamental scientific development. − …”

Section: Introductionmentioning

confidence: 99%

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Strategy to Improve the Photovoltaic Performance of Si/CuO Heterojunction via Incorporation of Ta₂O₅ Hopping Layer and MXene as Transparent Electrode

Sultana¹,

Siddiqui²,

Afshan³

et al. 2022

ACS Appl. Energy Mater.

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Recently, metal oxide semiconductors, especially copper oxides, have engrossed researchers in the domain of solar cells due to their good optoelectronic properties. The present study reports the development of a heterojunction of CuO and Ta2O5 on pyramidal Si decorated with a thin MXene coating as a transparent conductive electrode. Further, the impact of annealing ambient on the crystalline quality and phase selectivity of the as-deposited Cu x O y film has also been investigated. The as-designed Si/Ta2O5/CuO/MXene heterostructure shows improved efficiency as compared to the counter device without a Ta2O5 passivation layer by 109 factors. The superiority of the as-designed heterojunction has been examined in terms of short-circuit current density of −10.5 mA/cm2 and photoconversion efficiency of ∼1.47%, respectively. Therefore, the work emphasizes the importance of the combination of n-Ta2O5 and p-CuO film as the wide- and low-band-gap materials for the future low-cost solar cell compatible with the Si process line technology.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Strategy to Improve the Photovoltaic Performance of Si/CuO Heterojunction via Incorporation of Ta₂O₅ Hopping Layer and MXene as Transparent Electrode

Sultana¹,

Siddiqui²,

Afshan³

et al. 2022

ACS Appl. Energy Mater.

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“…Many researchers have investigated the CuO semiconductor material on Si substrate (CuO/n-Si) produced by various deposition techniques. So, CuO/n-Si heterojunctions have been produced by several methods, such as chemical spray pyrolysis [11], chemical bath deposition [12], pulsed laser deposition [13], thermal evaporation [14]. In this sense, copper oxide thin films (Cu x O) obtained by various techniques, have been investigated for structural and optical properties [15].…”

Section: Introductionmentioning

confidence: 99%

Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

Özmenteş

Temırcı

2020

Materials Science-Poland

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In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductance-voltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

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“…The aim of this study, therefore, is to introduce a simple, scalable technique for fabricating lightweight, architected hollow-truss lattices. Here, the lattices will be made out of functional ceramics, namely, copper (II) oxide, which is known to have antibacterial [36,37], catalytic [38][39][40] and photovoltaic properties [41,42], as well as iron (III) oxide, which is thermally stable at higher temperatures [43,44] and possesses magnetic properties that are useful for medical diagnostics and therapy [45][46][47]. The mechanical properties of the fabricated metal oxide lattices will then be investigated and compared to literature values for ceramic foams fabricated via other techniques.…”

Section: Introductionmentioning

confidence: 99%

Mechanical response of lightweight hollow truss metal oxide lattices

et al. 2019

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Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications

Cited by 31 publications

References 32 publications

Strategy to Improve the Photovoltaic Performance of Si/CuO Heterojunction via Incorporation of Ta₂O₅ Hopping Layer and MXene as Transparent Electrode

Strategy to Improve the Photovoltaic Performance of Si/CuO Heterojunction via Incorporation of Ta₂O₅ Hopping Layer and MXene as Transparent Electrode

Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

Mechanical response of lightweight hollow truss metal oxide lattices

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Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications

Cited by 31 publications

References 32 publications

Strategy to Improve the Photovoltaic Performance of Si/CuO Heterojunction via Incorporation of Ta2O5 Hopping Layer and MXene as Transparent Electrode

Strategy to Improve the Photovoltaic Performance of Si/CuO Heterojunction via Incorporation of Ta2O5 Hopping Layer and MXene as Transparent Electrode

Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

Mechanical response of lightweight hollow truss metal oxide lattices

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Product

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Strategy to Improve the Photovoltaic Performance of Si/CuO Heterojunction via Incorporation of Ta₂O₅ Hopping Layer and MXene as Transparent Electrode

Strategy to Improve the Photovoltaic Performance of Si/CuO Heterojunction via Incorporation of Ta₂O₅ Hopping Layer and MXene as Transparent Electrode