Fabrication and characterization of circular geometry InP/InGaAs double heterojunction bipolar transistors

Loga, R; Vilches, A.

doi:10.1088/0268-1242/19/7/013

Cited by 2 publications

(2 citation statements)

References 20 publications

(17 reference statements)

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“…The discontinuity in valance for the FSF/emitter interface prevents the holes from moving further up to the front contact while allowing the flow of electrons 74 . The band alignment of In 0.53 Ga 0.47 As structure was investigated in several studies 87 , 88 . The n-InP will form a barrier to holes, but a sink for electrons at the FSF and visa verse at the BSF/buffer.…”

Section: Resultsmentioning

confidence: 99%

Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm

Gamel

Ker

Lee

et al. 2021

Sci Rep

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The optimization of thermophotovoltaic (TPV) cell efficiency is essential since it leads to a significant increase in the output power. Typically, the optimization of In0.53Ga0.47As TPV cell has been limited to single variable such as the emitter thickness, while the effects of the variation in other design variables are assumed to be negligible. The reported efficiencies of In0.53Ga0.47As TPV cell mostly remain < 15%. Therefore, this work develops a multi-variable or multi-dimensional optimization of In0.53Ga0.47As TPV cell using the real coded genetic algorithm (RCGA) at various radiation temperatures. RCGA was developed using Visual Basic and it was hybridized with Silvaco TCAD for the electrical characteristics simulation. Under radiation temperatures from 800 to 2000 K, the optimized In0.53Ga0.47As TPV cell efficiency increases by an average percentage of 11.86% (from 8.5 to 20.35%) as compared to the non-optimized structure. It was found that the incorporation of a thicker base layer with the back-barrier layers enhances the separation of charge carriers and increases the collection of photo-generated carriers near the band-edge, producing an optimum output power of 0.55 W/cm2 (cell efficiency of 22.06%, without antireflection coating) at 1400 K radiation spectrum. The results of this work demonstrate the great potential to generate electricity sustainably from industrial waste heat and the multi-dimensional optimization methodology can be adopted to optimize semiconductor devices, such as solar cell, TPV cell and photodetectors.

show abstract

Section: Resultsmentioning

confidence: 99%

Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm

Gamel

Ker

Lee

et al. 2021

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Belghachi et al 82 for the FSF/emitter interface prevents the holes from moving further up to the front contact while allowing the flow of electrons 70 . The band alignment of In0.53Ga0.47As structure was investigated in several studies 83,84 . The n-InP will form a barrier to holes, but a sink for electrons at the FSF and visa verse at the BSF/buffer.…”

Section: Multi-dimensional Optimization Using Real Coded Genetic Algomentioning

confidence: 99%

Multi-Dimensional Optimization of In0.53Ga0.47As Thermophotovoltaic Cell using Real Coded Genetic Algorithm

Gamel

Ker

Lee

et al. 2020

Preprint

View full text Add to dashboard Cite

The optimization of thermophotovoltaic (TPV) cell efficiency is essential since it leads to a significant increase in the output power. Typically, the optimization of In0.53Ga0.47As TPV cell has been limited to single variable such as the emitter thickness, while the effects of the variation in other design variables are assumed to be negligible. The reported efficiencies of In0.53Ga0.47As TPV cell mostly remain < 15%. Therefore, this work develops a multi-variable or multi-dimensional optimization of In0.53Ga0.47As TPV cell using the real coded genetic algorithm (RCGA) under various radiation temperatures. RCGA was developed using Visual Basic and it was hybridized with Silvaco TCAD for the electrical characteristics simulation. Under radiation temperatures from 800 K to 2000 K, the optimized In0.53Ga0.47As TPV cell efficiency increases by an average percentage of 11.86% (from 8.5% to 20.35%) as compared to the non-optimized structure. It was found that the incorporation of a thicker base layer with the back-barrier layers enhances the separation of charge carriers and increases the collection of photo-generated carriers near the band-edge, producing an optimum output power of 0.55 W/cm2 (cell efficiency of 22.06%, without antireflection coating) at 1400 K radiation spectrum. The results of this work demonstrate the great potential to generate electricity sustainably from industrial waste heat and the multi-dimensional optimization methodology can be adopted to optimize semiconductor devices, such as solar cell, TPV cell and photodetectors.

show abstract

Fabrication and characterization of circular geometry InP/InGaAs double heterojunction bipolar transistors

Cited by 2 publications

References 20 publications

Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm

Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm

Multi-Dimensional Optimization of In0.53Ga0.47As Thermophotovoltaic Cell using Real Coded Genetic Algorithm

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