2003
DOI: 10.1021/nl0346631
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Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

Abstract: We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SiC is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.

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Cited by 44 publications
(24 citation statements)
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“…In the case of CNF growth on silicon substrates using a C 2 H 2 / NH 3 mixture it was determined that Si x N y deposits with x and y around 0.5. 18,89 Thus there is a delicate balance to the gas ratios used in regard the desired surface condition; for CNFs without an amorphous carbon coating a C 2 H 2 :NH 3 ratio of 20% or below must be used; 68 however for ratios lower than this, sidewall deposition of Si x N y material becomes more favorable.…”
Section: In Situ Pecvd Coatings and Surface Modificationmentioning
confidence: 99%
“…In the case of CNF growth on silicon substrates using a C 2 H 2 / NH 3 mixture it was determined that Si x N y deposits with x and y around 0.5. 18,89 Thus there is a delicate balance to the gas ratios used in regard the desired surface condition; for CNFs without an amorphous carbon coating a C 2 H 2 :NH 3 ratio of 20% or below must be used; 68 however for ratios lower than this, sidewall deposition of Si x N y material becomes more favorable.…”
Section: In Situ Pecvd Coatings and Surface Modificationmentioning
confidence: 99%
“…Carbon nanotubes (CNTs) are one of the most noteworthy materials for electronic, mechanical, and optical devices due to their unique structural and quantum characteristics [1][2][3][4][5][6][7][8][9]. Such carbon nanomaterials need to be functionalized on their surface in order to interact with other substances.…”
Section: Introductionmentioning
confidence: 99%
“…111 The possible application of VANTAs and VACNFs as microelectronic interconnects has driven many studies to characterize their end-contact quality. 71,[111][112][113][114][115] The reported end-contact resistances vary significantly from one measurement to another suggesting a wide spectrum of influencing parameters. Important parameters are the surface roughness of the metal underlayer as well as its surface oxidation, 115 the wettability of the metal underlayer and its work function, 112 and the growth conditions.…”
Section: Quality Factormentioning
confidence: 99%