2016
DOI: 10.3390/mi7120226
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Fabrication and Characterization of Capacitive Micromachined Ultrasonic Transducers with Low-Temperature Wafer Direct Bonding

Abstract: This paper presents a fabrication method of capacitive micromachined ultrasonic transducers (CMUTs) by wafer direct bonding, which utilizes both the wet chemical and O2 plasma activation processes to decrease the bonding temperature to 400 °C. Two key surface properties, the contact angle and surface roughness, are studied in relation to the activation processes, respectively. By optimizing the surface activation parameters, a surface roughness of 0.274 nm and a contact angle of 0° are achieved. The infrared i… Show more

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Cited by 5 publications
(3 citation statements)
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“…Conventional wafer bonding technology requires high temperatures (more than 1000 • C) to ensure good bonding quality [56], which constitutes another drawback as it prevents integration of CMUTs [54]; moreover, a high temperature could result in the degradation of thermally sensitive devices and residual stress in processed silicon wafers with different thermal expansion coefficients. However, methods for fabricating CMUTs with low-temperature wafer bonding at 400 • C have been developed by activating the surfaces by creating more hydroxyl (OH) groups, which results in higher hydrophlilicity [57]. Surface activation can be achieved by treating the SOI wafer and the substrate with oxygen plasma or wet chemical or both, however treating the pre-bonded wafers to chemicals containing various reagents to activate their surface, followed by O 2 plasma treatment helped to improve the hydrophilicity [57].…”
Section: B Cmutmentioning
confidence: 99%
See 1 more Smart Citation
“…Conventional wafer bonding technology requires high temperatures (more than 1000 • C) to ensure good bonding quality [56], which constitutes another drawback as it prevents integration of CMUTs [54]; moreover, a high temperature could result in the degradation of thermally sensitive devices and residual stress in processed silicon wafers with different thermal expansion coefficients. However, methods for fabricating CMUTs with low-temperature wafer bonding at 400 • C have been developed by activating the surfaces by creating more hydroxyl (OH) groups, which results in higher hydrophlilicity [57]. Surface activation can be achieved by treating the SOI wafer and the substrate with oxygen plasma or wet chemical or both, however treating the pre-bonded wafers to chemicals containing various reagents to activate their surface, followed by O 2 plasma treatment helped to improve the hydrophilicity [57].…”
Section: B Cmutmentioning
confidence: 99%
“…However, methods for fabricating CMUTs with low-temperature wafer bonding at 400 • C have been developed by activating the surfaces by creating more hydroxyl (OH) groups, which results in higher hydrophlilicity [57]. Surface activation can be achieved by treating the SOI wafer and the substrate with oxygen plasma or wet chemical or both, however treating the pre-bonded wafers to chemicals containing various reagents to activate their surface, followed by O 2 plasma treatment helped to improve the hydrophilicity [57]. Alternatively, also anodic bonding enables CMUT fabrication with low thermal budgets; furthermore, it can also improve the CMUT transparency, thus allowing coupling with optical measurement techniques [31].…”
Section: B Cmutmentioning
confidence: 99%
“…Anodic bonding, metal bonding, adhesive polymers, and wafer direct bonding are the typical bonding methods used for CMUT fabrication [5,6,22,23,24,25,26]. Wafer bonding encounters yield issues due to the roughness of the wafers’ surface and contamination at the bonding surfaces [22].…”
Section: Introductionmentioning
confidence: 99%