Fabrication and characterization of BN/AlGaN/GaN metal‐insulator‐semiconductor heterojunction field‐effect transistors with sputtering‐deposited BN gate dielectric

Nguyen, Tuan Quy; Shih, Hong‐An; Kudo, Masahiro; Suzuki, Toshimitsu

doi:10.1002/pssc.201300290

Cited by 14 publications

(6 citation statements)

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“…For high-speed and high-power applications, GaN-based metal-insulator-semiconductor field-effect transistors (MIS-FETs) have been extensively investigated using various gate insulators, such as high-dielectric-constant (high-k) oxides Al 2 O 3 [1], HfO 2 [2,3], TiO 2 [4], AlSiO [5,6], AlTiO [7][8][9][10][11][12], high-k oxynitrides TaON [13], AlON [14], and high-k nitrides BN [15,16], AlN [17][18][19][20][21]. In particular, Al x Ti y O (AlTiO), an alloy of Al 2 O 3 and TiO 2 , is an important insulator, because it can be applied to dielectric constant engineering, energy gap engineering, and interface charge engineering [11].…”

Section: Introductionmentioning

confidence: 99%

Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures

Nguyen,

Deng,

Suzuki

2023

Semicond. Sci. Technol.

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We have systematically investigated low-frequency noise (LFN) in AlTiO/AlGaN/GaN metalinsulator-semiconductor field-effect transistors (MIS-FETs) with non-gate-recessed or partially-gate-recessed structures, where gate insulators using AlTiO, an alloy of Al2O3 and TiO2, are obtained by atomic layer deposition. For drain current LFN, we find pure 1/f spectra for the well-above-threshold regime, and superposition of 1/f and Lorentzian spectra near the threshold voltage. The Hooge parameters are evaluated from the 1/f contribution and found to be independent of the AlTiO thickness. However, the remaining AlGaN thickness strongly affects the Hooge parameter near the threshold voltage; in the low channel electron concentration regime of the partially-gate-recessed FETs, a smaller remaining AlGaN thickness gives a larger Hooge parameter proportional to the inverse of the electron concentration, indicating that channel electron number fluctuation dominates the Hooge parameter. We consider that the channel electron number fluctuation is caused by electron traps introduced by the recess etching process in the remaining AlGaN. On the other hand, the Lorentzian spectra give specific time constants almost independent of the AlTiO thickness and the remaining AlGaN thickness, corresponding to trap depths of 0.6-0.8 eV. This can be attributed to traps in AlTiO near the AlTiO/AlGaN interface.

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Section: Introductionmentioning

confidence: 99%

Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures

Nguyen,

Deng,

Suzuki

2023

Semicond. Sci. Technol.

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“…Besides the compact size, the challenge of reducing the thermal resistance of an LED package is mainly related to the scarcity of suitable substrate materials where chips are grown heteroepitaxially on foreign sapphire and SiC substrates with a large lattice and thermal expansion coefficient mismatch (future candidates may be hexagonal boron nitride substrate with plasma enhanced chemical vapor deposition (PECVD) and amorphous boron nitride substrate prepared by magnetron sputtering have been reported in AlGaN/GaN high electron mobility transistors [ 34 , 35 , 36 ]). Additional interfacial thermal resistance between each layer also increases the total thermal resistance of the package [ 21 , 37 , 38 ].…”

Section: Introductionmentioning

confidence: 99%

A Critical Review on the Junction Temperature Measurement of Light Emitting Diodes

2022

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In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most efficient alternative to conventional light sources. Yet, in comparison to other lighting systems, LEDs operate at low temperatures while junction temperature (Tj) is is among the main factors dictating their lifespan, reliability, and performance. This indicates that accurate measurement of LED temperature is of great importance to better understand the thermal effects over a system and improve performance. Over the years, various Tj measurement techniques have been developed, and existing methods have been improved in many ways with technological and scientific advancements. Correspondingly, in order to address the governing phenomena, benefits, drawbacks, possibilities, and applications, a wide range of measurement techniques and systems are covered. This paper comprises a large number of published studies on junction temperature measurement approaches for LEDs, and a summary of the experimental parameters employed in the literature are given as a reference. In addition, some of the corrections noted in non-ideal thermal calibration processes are discussed and presented. Finally, a comparison between methods will provide the readers a better insight into the topic and direction for future research.

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“…As a gateinsulator of the MIS devices, high-dielectric-constant (high-k) oxide materials, such as Al 2 O 3 , 1 HfO 2 , 2,3 and also high-k nitride materials, such as AlN, 4-8 BN, 9,10 have been investigated. Owing to their high thermal conductivities, the nitride materials are favorable also for passivation of GaN-based devices, exhibiting good heat release properties.…”

Section: Introductionmentioning

confidence: 99%

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Shih

Kudo

Suzuki

2014

Journal of Applied Physics

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Articles you may be interested inModeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequencytemperature mapping Appl. Phys. Lett. 101, 043501 (2012); 10.1063/1.4737876 Effects of interface states and temperature on the C -V behavior of metal/insulator/AlGaN/GaN heterostructure capacitorsWe present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gatecontrol efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis. V C 2014 AIP Publishing LLC. [http://dx.

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Fabrication and characterization of BN/AlGaN/GaN metal‐insulator‐semiconductor heterojunction field‐effect transistors with sputtering‐deposited BN gate dielectric

Cited by 14 publications

References 0 publications

Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures

Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures

A Critical Review on the Junction Temperature Measurement of Light Emitting Diodes

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

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