2017
DOI: 10.1021/acs.nanolett.7b01320
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Fabricating and Controlling Silicon Zigzag Nanowires by Diffusion-Controlled Metal-Assisted Chemical Etching Method

Abstract: Silicon (Si) zigzag nanowires (NWs) have a great potential in many applications because of its high surface/volume ratio. However, fabricating Si zigzag NWs has been challenging. In this work, a diffusion-controlled metal-assisted chemical etching method is developed to fabricate Si zigzag NWs. By tailoring the composition of etchant to change its diffusivity, etching direction, and etching time, various zigzag NWs can be easily fabricated. In addition, it is also found that a critical length of NW (>1 μm) is … Show more

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Cited by 49 publications
(44 citation statements)
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References 45 publications
(66 reference statements)
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“…3b. Some border effects have been reported also in wet-MacEtch: Chen et al observed a variation of etching direction going from the border to the centre as a consequence of different diffusion flux at the border; 63 with a micropattern of an Au catalyst we experienced a kind of reverse effect, with slower etching at the border. 32 In the case MacEtch in the gas phase, we observed a faster etching at the border for a pattern area of 1 cm 2 , while the etching is uniform for a patterned area of a few mm 2 .…”
Section: Etching Mechanismmentioning
confidence: 57%
“…3b. Some border effects have been reported also in wet-MacEtch: Chen et al observed a variation of etching direction going from the border to the centre as a consequence of different diffusion flux at the border; 63 with a micropattern of an Au catalyst we experienced a kind of reverse effect, with slower etching at the border. 32 In the case MacEtch in the gas phase, we observed a faster etching at the border for a pattern area of 1 cm 2 , while the etching is uniform for a patterned area of a few mm 2 .…”
Section: Etching Mechanismmentioning
confidence: 57%
“…As an alternative to RIE, metal‐assisted chemical etching (MacEtch) has been suggested. [ 15–28 ] It can fabricate high‐aspect‐ratio semiconductor nanostructures without causing crystal defects because it uses wet‐based chemical processes. Patterned metal catalysts are deposited on a semiconductor that is immersed in an etchant composed of an acid and oxidant.…”
Section: Introductionmentioning
confidence: 99%
“…Integrated with other advanced fabrication methods, such as RIE, metal‐assisted chemical etching (MaCE), and so on, the self‐assembled PS MCCs can be used as templates to fabricate various large‐scale nanostructure arrays, which show great potential applications in many fields . Figure exhibits several typical nanostructure arrays those are fabricated by using the self‐assembled PS MCCs as templates.…”
Section: Resultsmentioning
confidence: 99%