“…In the cases studied, the formation of distributions with different sizes of Si-QDs can be expected after following a different number of thermal annealing processes, and also due to the dissimilar ion-irradiation energies employed for the implantation in each sample. In addition, we consider that subsequent ion-implantation processes produces additional diffusion and nucleation processes, which can result in changes in the structure, and modification in size of the initially implanted NPs, as it has been previously suggested for dual implantation processes [27].…”