Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities

Khakifirooz, A.; Cheng, Kangguo; Kumar, Anshuman; Kulkarni, P.; Ponoth, S.; Haran, B.; Mehta, Sunita; Cai, Jin; Byrant, A.; Kuss, J.; Edge, L. F.; Jagannathan, H.; Ren, Zhibin; Reznicek, A.; Adam, T.; He, Hong; Kimball, A. S.; Kanakasabapathy, S.; Schmiz, S.; Holmes, Steven J.; Majumdar, Amlan; Jagannathan, B.; Yang, Deren; Upham, A.; Seo, Seung-Bum; Herman, J.; Johnson, Rob; Zhu, Yan; Jamison, P.; Zhu, Zhengming; Vanamurth, L. H.; Faltermeier, J.; Fan, S.; Horak, D.; Hook, T.B.; Narayanan, V.; Paruchuri, Vamsi; Bu, H.; Sadana, D. K.; Kozlowsk, P.; Doris, B.; McHerron, D.; Haensch, Wilfried; Khare, Mukesh; Leobondung, E.; O’Neil, James P.; Shahidi, G.

doi:10.7567/ssdm.2010.c-6-1

Cited by 1 publication

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[4][5][6] More recently, in addition to Si and SiO 2 , silicon nitride (SiN) has been widely used in Si-based VLSI systems. For example, selective etching of SiN over silicon dioxide (SiO 2 ) and/or silicon (Si) is used in the formation processes of dual stress liners [7][8][9][10] or hard masks of various VLSI devices. [11][12][13][14][15][16] It has been known that the use of plasmas based on hydrofluorocarbon (HFC) gases such as CHF 3 and CH 2 F 2 or hydrogen/fluorocarbon (FC) gases can result in higher etching rates of SiN.…”

Section: Introductionmentioning

confidence: 99%

Characterization of polymer layer formation during SiO₂/SiN etching by fluoro/hydrofluorocarbon plasmas

Miyake

Ito

Isobe

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In reactive-ion etching (RIE) of silicon oxide (SiO2) or silicon nitride (SiN) by fluorocarbon (FC) or hydrofluorocarbon (HFC) plasmas, fluorinated carbon layers may be formed on the etched surfaces and affect their etching rates. In this study, the properties of SiO2 and SiN etching by FC or HFC plasmas are examined in light of the formation mechanism of such carbon layers by molecular dynamics (MD) simulation. Furthermore, in this study, the electronegativity effect of fluorine (F) is taken into account in the interatomic potential functions for C–F and Si–F bonds and MD simulations here show SiO2 and SiN sputtering yields are closer to those obtained from ion beam experiments. It has been found from MD simulations that the SiN sputtering yield during etching by HFC ions is higher than that by FC ions owning to the fact that hydrogen in the HFC ion beam tends to impede the formation of a fluorocarbon layer on SiN and therefore energetic fluorine ions/atoms are more readily available to etch SiN underneath the polymer layer.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of polymer layer formation during SiO₂/SiN etching by fluoro/hydrofluorocarbon plasmas

Miyake

Ito

Isobe

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities

Cited by 1 publication

References 4 publications

Characterization of polymer layer formation during SiO₂/SiN etching by fluoro/hydrofluorocarbon plasmas

Characterization of polymer layer formation during SiO₂/SiN etching by fluoro/hydrofluorocarbon plasmas

Contact Info

Product

Resources

About

Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities

Cited by 1 publication

References 4 publications

Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas

Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas

Contact Info

Product

Resources

About

Characterization of polymer layer formation during SiO₂/SiN etching by fluoro/hydrofluorocarbon plasmas

Characterization of polymer layer formation during SiO₂/SiN etching by fluoro/hydrofluorocarbon plasmas