Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm

Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J.

doi:10.1063/1.1581978

Cited by 66 publications

(36 citation statements)

References 19 publications

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“…On the other hand, the growth of AlGaAs layers at such low temperatures results in an increased oxygen incorporation and point defect formation, which results in a degradation of the performance of laser diodes [2,3]. Thus, highly strained QWs typically are grown at lower temperatures than the surrounding (Al)GaAs waveguide and cladding layers [4,5]. Several authors have shown, that a post-growth annealing of InGaAs QWs results in a blue shift of the emission wavelength [6,7].…”

Section: Introductionmentioning

confidence: 96%

Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications

Bugge¹,

Zeimer²,

Wenzel³

et al. 2004

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 96%

Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications

Bugge¹,

Zeimer²,

Wenzel³

et al. 2004

Journal of Crystal Growth

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“…11,12 The mixed AsN-based alloys had been studied in the dilute-nitrogen regime specifically for resulting in some of the breakthroughs in the long wavelength lasers on GaAs. [13][14][15][16][17][18] The findings of dilute-nitride GaAs-based alloy had led into the state-of-the-art and low threshold laser devices for the telecommunication applications.…”

Section: Introductionmentioning

confidence: 99%

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Tan

Tansu

2015

AIP Advances

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Density functional theory (DFT) calculations with the local density approximation (LDA) functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

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“…Ryu et al [2] and Salomonsson et al [3] have reported the development of vertical cavity surface emitting lasers (VCSELs) operating around 1220 nm. The longest wavelength of an edge-emitting laser using InGaAs/GaAs QWs is currently at 1233 µm [4]. We have recently reported the development of high-power laser diodes operating at 1206 nm by using InGaAs QWs [5,6].…”

Section: Introductionmentioning

confidence: 99%

HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm

Sharma

Zorn²,

Zeimer

et al. 2005

Cryst. Res. Technol.

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Highly strained In x Ga 1-x As quantum wells (QWs) with GaAs barriers emitting around 1.2 µm are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures using conventional precursors. The effects of growth temperature, V/III ratio and growth rate on QW composition and luminescence properties are studied. The variation of indium incorporation with V/III ratio at a growth temperature of 510°C is found to be opposite to the results reported for 700°C. By an appropriate choice of the growth parameters, we could extend the room temperature photoluminescence (PL) wavelength of InGaAs/GaAs QWs up to about 1.24 µm which corresponds to an average indium content of 41% in the QW. The results of the growth study were applied to broad area laser diodes emitting at 1193 nm with low threshold current densities.

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Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm

Cited by 66 publications

References 19 publications

Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications

Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm

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