Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

Marshall, Andrew; Tan, Chee Hing; Steer, Matthew J.; David, J.P.R.

doi:10.1109/lpt.2009.2019625

Cited by 55 publications

(36 citation statements)

References 14 publications

(15 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Mikhailova et al reported that was approximately 10 times greater than in InAs, at 77K (Mikhailova et al, 1976). This discrepancy is given more consideration in a number of journal papers (Marshall et al, 2008;2009;2010) ; here it will simply be noted that during the new study of InAs e-APDs reviewed in this chapter, more than 20 different InAs diode structures have been characterised at room temperature, and all results are consistent with the finding that ~ 0. The most robust determination of the relative magnitude of and in any material comes from the measurement of M e and M h on a single diode structure, eliminating any uncertainty over variations in layer thickness and electric field profiles.…”

Section: Avalanche Multiplicationmentioning

confidence: 57%

“…The e-APD nature of InAs APDs has been further confirmed by excess noise measurements (Marshall et al, 2009). The F e measured on InAs p-i-n diodes, shown in figure 7, falls slightly below the local model prediction for k = 0 as given by equation 2.…”

Section: Excess Noisementioning

confidence: 65%

“…Hence it remains desirable to identify a more widely available III-V material which exhibits comparable e-APD properties. Recent characterisation and development work on InAs APDs has shown that they can meet this desire for the first time (Marshall et al, 2008;2009;2010). This chapter presents the emerging InAs e-APD, summarising its properties using both recently published data and new results.…”

Section: ()mentioning

confidence: 99%

“…Multiplication factor A comparison between the F e reported on APDs of different materials including, InAs diodes with a 3.5μm intrinsic width and radii of 50μm ( ) and 100μm ( ) (Marshall et al, 2009), Hg x-1 Cd x Te diodes with cut-off wavelengths of 4.2µm ( ) and 2.2µm (▲) (Beck et al, 2006), and an InAlAs diode ( ) (Goh et al, 2007).…”

Section: Excess Noisementioning

confidence: 99%

See 3 more Smart Citations

The InAs Electron Avalanche Photodiode

Marshall¹

2011

Advances in Photodiodes

View full text Add to dashboard Cite

Section: Avalanche Multiplicationmentioning

confidence: 57%

Section: Excess Noisementioning

confidence: 65%

Section: ()mentioning

confidence: 99%

Section: Excess Noisementioning

confidence: 99%

See 2 more Smart Citations

The InAs Electron Avalanche Photodiode

Marshall¹

2011

Advances in Photodiodes

View full text Add to dashboard Cite

“…Recently Hobbs et al [12] demonstrated that an avalanche photodiode can provide significant signal to noise ratio improvement in radiation thermometry. InAs has also been demonstrated as an excellent avalanche photodiode that operates with single carrier multiplication to produce negligible excess noise, presenting a huge potential further improvement for infrared imaging [13,14]. Moreover, Sandall et al have reported linear arrays of 1×128 InAs avalanche photodiodes [15].…”

Section: Introductionmentioning

confidence: 99%

InAs photodiode for low temperature sensing

Zhou

Tan

2015

SPIE Proceedings

View full text Add to dashboard Cite

We report on the evaluation of InAs photodiodes and their potential for low temperature sensing. InAs n-i-p photodiodes were grown and analyzed in this work. Radiation thermometry measurements were performed at reference blackbody temperatures of 37 to 80 o C to determine photocurrent and temperature error. The uncooled InAs photodiodes, with a cutoff wavelength of 3.55 m, detect a target temperature above 37 o C with a temperature error of less than 0.46 o C. When the photodiode was cooled to 200 K, the temperature error at 37 o C improves by 10 times from 0.46 to 0.048 o C, suggesting the potential of using InAs for human temperature sensing.

show abstract

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

View full text Add to dashboard Cite

GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

show abstract

Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

Cited by 55 publications

References 14 publications

The InAs Electron Avalanche Photodiode

The InAs Electron Avalanche Photodiode

InAs photodiode for low temperature sensing

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Contact Info

Product

Resources

About