Extremely improved InP template and GaInAsP system growth on directly‐bonded InP/SiO₂‐Si and InP/glass substrate

Abstract

We have developed an ultrathin InP template with low defect density on SiO2‐Si and glass substrate by employing wet etching and wafer direct bonding technique. We have demonstrated epitaxial growth on these substrates and GaInAs/InP multiple quantum well layers were grown by low pressure metal‐organic vapor‐phase epitaxy. Photoluminescence measurements of the layers show that they are optically active and we have obtained almost the same intensity from these substrates compared to the InP substrate. These results may be attributed to improvement of InP template quality and should provide further improvements in device performance realized on SiO2‐Si and glass substrate. And, these are promising results in terms of integration of InP‐based several functional optical devices on SiO2‐Si and glass substrate. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Novel integration method for III–V semiconductor devices on silicon platform

“…The same measurement has also been performed on InP=SiO 2 -Si and InP=quartz substrates and good PL characteristics were observed (data not shown). 37) In addition, almost no thermal strain due to the difference in the thermal expansion coefficient between the InP layer and the Si substrate or broadening of the FWHM of the thin-film InP layer was observed from the samples both after the bonding and after the MOVPE process, as shown in Fig. 11.…”

Thermal treatment for preventing void formation on directly-bonded InP/Si interface

“…In this study, we realized thin film InP epi-layers using metal organic vapor phase epitaxy (MOVPE) and wetetching, 22,23) and we fabricated InP/Si substrates using the conventional hydrophilic wafer bonding technique. No outgassing channels were formed on the Si substrate.…”