Extremely high power 1.48 /spl mu/m GaInAsP/InP GRIN-SCH strained MQW lasers

Kasukawa, A.; Namegaya, T.; Iwai, Naoharu; Yamanaka, N.; Ikegami, Yoshikazu; Tsukiji, Naoki

doi:10.1109/68.265872

Cited by 18 publications

(1 citation statement)

References 9 publications

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“…Strained-layer (SL) multiquantum-well (MQW) LDs have been demonstrated as one of the key structures for those LDs. [1][2][3][4] However, at the same time, discrepancies in experimental improvements from theoretical predictions have also been recognized, e.g., still large temperature sensitivity of performances and near an order of magnitude smaller differential gain than the prediction. [5][6][7][8][9][10][11][12][13][14][15] On the causes of the above discrepancies, recent theoretical and experimental works suggest that (A) carrier leakage from quantum wells (QWs) to optical confinement (OC) layer and diffusion delay effect in OC layer play an dominant role.…”

Section: Introductionmentioning

confidence: 99%

Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers

Irikawa¹,

Ishikawa²,

Fukushima³

et al. 2000

Jpn. J. Appl. Phys.

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A model of carrier leakage lifetime is presented taking into account the density of states for quantum-wells and band nonparabolicity. Rate equations are also proposed including leakage of both types of carriers and carrier loss in both sides of optical confinement layers. The carrier loss coefficients extracted by adopting this model on the measured modulation bandwidth of 1.5 µm-wavelength multiquantum-well lasers coincided with reported values within their distributions. Measured temperature sensitivity of threshold current and that of K factor were also well explained with the improved model using those extracted carrier loss coefficients. The dominant causes of low characteristic temperature T 0 of present compressive-strained multiquantum-well lasers were quantitatively considered and found to be attributed to 1) Auger carrier loss and 2) thermionic carrier leakage and diffusion delay effect. T 0 over 150 K is expected by reducing the effect of those two factors. Possibilities of finding an actual method to reduce the effect of the above two factors are discussed.

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