Extreme ultraviolet lithography

Gwyn, C. W.; Stulen, R. H.; Sweeney, Donald W.; Attwood, David

doi:10.1116/1.590453

Cited by 307 publications

(137 citation statements)

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“…The spectral behavior of Gd and Tb plasmas is expected to be similar to that of Sn plasmas for the 13.5-nm EUV sources [4][5][6][7][8][9][10], because of the similar atomic structure of 4d open-shell ions [11]. Previous work on rare-earth plasma EUV sources has been focused on absorption spectroscopy by generating quasicontinuum spectra at low laser power [12,13].…”

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confidence: 99%

“…The focused intensity was varied from 10 10 to 10 13 W/cm 2 with focal spot sizes of 50 µm to compare with the laser wavelength effect and to achieve high laser intensity. The laser was operated in a single shot 4 mode. An absolute EUV energy was measured by use of a calibrated EUV energy meter equipped with a calibrated Mo/B 4 C multilayer mirror [2] and a Zr filter.…”

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confidence: 99%

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Systematic investigation of self-absorption and conversion efficiency of 6.7 nm extreme ultraviolet sources

Ôtsuka

Kilbane

Higashiguchi

et al. 2010

Applied Physics Letters

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We have investigated the dependence of the spectral behavior and conversion efficiencies of rare-earth plasma extreme ultraviolet sources with peak emission at 6.7 nm on laser wavelength and the initial target density. The maximum conversion efficiency was 1.3% at a laser intensity of 1.6×1012 W/cm2 at an operating wavelength of 1064 nm, when self-absorption was reduced by use of a low initial density target. Moreover, the lower-density results in a narrower spectrum and therefore improved spectral purity. It is shown to be important to use a low initial density target and/or to produce low electron density plasmas for efficient extreme ultraviolet sources when using high-Z targets.

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confidence: 99%

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confidence: 99%

Systematic investigation of self-absorption and conversion efficiency of 6.7 nm extreme ultraviolet sources

Ôtsuka

Kilbane

Higashiguchi

et al. 2010

Applied Physics Letters

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“…Due to its capability for large-area fabrication, conventional photo-lithography is a wide-spread fabrication technology. Because the minimum feature size is limited by optical diffraction, sub-micrometer structures can be created by deep ultra-violet (DUV) at hundred-nanometer wavelengths or extreme ultra-violet (EUV) at ten-nanometer wavelengths lithography techniques (Gwyn et al, 1998). Because these technologies require complex vacuum optics, their cost remains prohibitive.…”

Section: Introductionmentioning

confidence: 99%

Ultrashort Pulsed Lasers – Efficient Tools for Materials Micro-Processing

Zamfirescu¹,

Ulmeanu²,

Bunea³

et al. 2011

Recent Advances in Nanofabrication Techniques and Applications

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“…Current interest in super-high-resolution optical systems is related to the development of a number of fundamental and applied fields, such as nanophysics and nanotechnology, X-ray microscopy in the «Water window» and the projection nanolithography in the extreme ultraviolet (EUV) spectral range (Gwyn, 1998;Benschop et al, 1999;Naulleau et al, 2002;Ota et al, 2001;Andreev et al, 2000;Cheng, 1987). The great economical importance in applying the EUV lithography which, as expected, should replace the conventional deep ultraviolet lithography in commercial production of integrated circuits with topology at a level of 10-30 nm dictates a level of efforts carried out in the fields related to the technology.…”

Section: Introductionmentioning

confidence: 99%