Lithography 2010
DOI: 10.5772/8172
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Manufacturing and Investigating Objective Lens for Ultrahigh Resolution Lithography Facilities

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Cited by 4 publications
(5 citation statements)
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“…It was reported [30] that wave front aberrations can be measured to within 0.08 nm at a NA of about 0.1. Unfortunately, except for [25, 26,30], the authors of other studies either do not consider the measurement accuracies ensured by instruments or give only data without a description of the accuracy measurement method, which cast deep doubts on their reliability. Interferometers based on a diffracted reference wave have not found ubiquitous applications in prac tice because their adjustment is a complicated process and the quality of the diffracted wave front is uncon trollably dependent on aberrations of primary optics [31].…”
Section: Methods Of Investigating the Shape And Roughness Of Optical mentioning
confidence: 96%
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“…It was reported [30] that wave front aberrations can be measured to within 0.08 nm at a NA of about 0.1. Unfortunately, except for [25, 26,30], the authors of other studies either do not consider the measurement accuracies ensured by instruments or give only data without a description of the accuracy measurement method, which cast deep doubts on their reliability. Interferometers based on a diffracted reference wave have not found ubiquitous applications in prac tice because their adjustment is a complicated process and the quality of the diffracted wave front is uncon trollably dependent on aberrations of primary optics [31].…”
Section: Methods Of Investigating the Shape And Roughness Of Optical mentioning
confidence: 96%
“…When traditional roughness measurement tech niques (atomic force and optical interference micros copy and hard X ray diffusion scattering analysis) are employed to investigate supersmooth surfaces in the mid and high frequency ranges, their real possibili ties must be seriously revised [26,27].…”
Section: Methods Of Investigating the Shape And Roughness Of Optical mentioning
confidence: 99%
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“…Thus, the form of the transition layer ceases to be fixed; at the same time, it contains fewer degrees of freedom than in model-free approaches. The features of such an extended model will be considered in a general manner and illustrated with examples of real mirrors optimized for beyond EUV lithography at wavelengths of 11.3 nm (Chkhalo & Salashchenko, 2013;Montcalm et al, 1998).…”
Section: Introductionmentioning
confidence: 99%
“…В частности, ИДВС на основе одномодового оптического волокна [6] из-за большого диаметра кора d Нанофизика и наноэлектроника" (угловая апертура дифрагированной волны определяется отношением λ/d) обладают низкой рабочей апертурой и сильной неоднородностью интенсивности генерируемой волны. Помимо ограниченной апертуры сильная неоднородность интенсивности волны приводит к сдвигу координат экстремумов интерференционной картины и соответственно потере точности измерений [9].…”
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