Extreme ultraviolet lithography based nanofabrication using a bilevel photoresist

Talin, A. Alec; Cardinale, Gregory Frank; Wallow, Tom; Dentinger, Paul M.; Pathak, Shibnath; Chinn, Douglas; Folk, Daniel R.

doi:10.1116/1.1689308

Cited by 9 publications

(8 citation statements)

References 10 publications

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“…Utrathin thin channels are favorable for chem-FETs because they exhibit far lower drift, thereby making superior sensors. 6 We show that enhanced electrical properties can be achieved by employing a bilayer photoresist liftoff process, [11][12][13][14][15] which sculpts the contact morphology at the edge of the electrodes.…”

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confidence: 97%

Bilayer processing for an enhanced organic-electrode contact in ultrathin bottom contact organic transistors

Park

Yang

Colesniuc

et al. 2008

Applied Physics Letters

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A bilayer lift-off process has been employed to fabricate optimal electrode contact geometry for statistical characterization of ultrathin organic thin-film transistors ͑OTFTs͒. For over 100 p-channel ultrathin ͑12 ML͒ copper phthalocyanine ͑CuPc͒ OTFTs, the bilayer photoresist lift-off process increased the field effect mobility by two orders of magnitude, decreased the contact resistance by three orders of magnitude, increased the on/off ratio by one order of magnitude, and the threshold voltage was decreased by a factor of three compared to conventionally processed devices. The generality of the method was validated by fabricating OTFTs in four different phthalocynaines and CuPc OTFTs with eight different channel thicknesses.

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confidence: 97%

Bilayer processing for an enhanced organic-electrode contact in ultrathin bottom contact organic transistors

Park

Yang

Colesniuc

et al. 2008

Applied Physics Letters

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“…PMGI is designed for use in photolithographic processing as a sacrificial layer and as the under-layer in bi-layer lift-off metallization processing, and its effectiveness in EUV lithography has been demonstrated. 12 In the field of SWNT devices, PMGI has been shown to have excellent properties as a carrier material for iron catalyst particles for SWNT growth. 13 To our knowledge, however, there have been no reports of its use in an improved photolithographic process for fabricating contacts to high quality SWNT devices.…”

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confidence: 99%

Optimized photolithographic fabrication process for carbon nanotube devices

2011

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We have developed a photolithographic process for the fabrication of large arrays of single walled carbon nanotube transistors with high quality electronic properties that rival those of transistors fabricated by electron beam lithography. A buffer layer is used to prevent direct contact between the nanotube and the novolac-based photoresist, and a cleaning bake at 300C effectively removes residues that bind to the nanotube sidewall during processing. In situ electrical measurement of a nanotube transistor during a temperature ramp reveals sharp decreases in the ON-state resistance that we associate with the vaporization of components of the photoresist. Data from nearly 2000 measured nanotube transistors show an average ON-state resistance of 250 ± 100 kΩ. This new process represents significant progress towards the goal of high-yield production of large arrays of nanotube transistors for applications including chemical sensors and transducers, as well as integrated circuit components

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“…5 The optical aligner can reliably produce electrodes with gaps of 1 m, while the EUVL tool can produce electrodes with sub 50 nm gaps. 5 The optical aligner can reliably produce electrodes with gaps of 1 m, while the EUVL tool can produce electrodes with sub 50 nm gaps.…”

Section: Methodsmentioning

confidence: 99%

Assembly and electrical characterization of DNA-wrapped carbon nanotube devices

Talin

Dentinger

Jones

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this article we report on the electrical characteristics of single wall carbon nanotubes (SWCNTs) wrapped with single-stranded deoxyribonucleic acid (ssDNA). We fabricate these devices using a solution-based method whereby SWCNTs are dispersed in aqueous solution using 20-mer ssDNA, and are placed across pairs of Au electrodes using alternating current dielectrophoresis (ACDEP). In addition to current voltage characteristics, we evaluate our devices using scanning electron microscopy and atomic force microscopy. We find that ACDEP with ssDNA based suspensions results in individual SWCNTs bridging metal electrodes, free of carbon debris, while similar devices prepared using the Triton X-100 surfactant yield nanotube bundles, and frequently have carbon debris attached to the nanotubes. Furthermore, the presence of ssDNA around the nanotubes does not appear to appreciably affect the overall electrical characteristics of the devices. In addition to comparing the properties of several devices prepared on nominally clean Au electrodes, we also investigate the effects of self-assembled monolayers of C 14 H 29 -SH alkyl thiol and benzyl mercaptan on the adhesion and electrical transport across the metal/SWCNT/metal devices.

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Extreme ultraviolet lithography based nanofabrication using a bilevel photoresist

Cited by 9 publications

References 10 publications

Bilayer processing for an enhanced organic-electrode contact in ultrathin bottom contact organic transistors

Bilayer processing for an enhanced organic-electrode contact in ultrathin bottom contact organic transistors

Optimized photolithographic fabrication process for carbon nanotube devices

Assembly and electrical characterization of DNA-wrapped carbon nanotube devices

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