Extreme-ultraviolet collector mirror measurement using large reflectometer at NewSUBARU synchrotron facility

Iguchi, Haruki; Hashimoto, H.; Kuki, Masaki; Harada, Tetsuo; Kinoshita, Hiroo; Watanabe, Takeo; Platonov, Yuriy Ya.; Kriese, M. D.; Rodriguez, Jim

doi:10.7567/jjap.55.06gc01

Cited by 8 publications

(4 citation statements)

References 30 publications

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“…Dark current was 3.7 e − /s/pixel at −7 °C. The sensor's QE was measured at the BL-10 beamline [6][7][8] of the NewSUBARU synchrotron facility (University of Hyogo) same as previous paper. 3) We set the exposure time to 2 ms, for which the signal was not saturated even in the high-gain mode.…”

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confidence: 99%

High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

Harada

Teranishi

Watanabe

et al. 2019

Appl. Phys. Express

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We develop a high-quantum-efficiency, high-exposure-durability backside-illuminated CMOS image sensor for soft-X-ray detection. The backside fabrication process is optimized to reduce the dead-layer thickness, and the Si-layer thickness is increased to 9.5 μm to reduce radiation damage. Our sensor demonstrates a high quantum efficiency of >90% in the photon-energy range of 80–1000 eV. Further, its EUV-regime efficiency is ∼100% because the dead-layer thickness is only 5 nm. The readout noise is as low as 2.5 e− rms and the frame rate as high as 48 fps, which makes the device practical for general soft X-ray experiments.

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confidence: 99%

High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

Harada

Teranishi

Watanabe

et al. 2019

Appl. Phys. Express

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“…25) In the 90-120 eV region, the high-order diffraction light from the monochromator was eliminated using a two molybdenum (Mo) mirror suppressor. 26) In 150-350 eV region, approximately 10% of the high-order diffraction light remained, which could degrade the accuracy of the QE measurement. This high-order diffraction amount was evaluated in the single event experiment as shown in Fig.…”

mentioning

confidence: 99%

Energy- and spatial-resolved detection using a backside-illuminated CMOS sensor in the soft X-ray region

Harada¹,

Teranishi²,

Watanabe³

et al. 2019

Appl. Phys. Express

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We recently developed a backside-illuminated CMOS image sensor for soft X-ray detection based on a commercial CMOS sensor. This sensor demonstrated a high quantum efficiency, low readout noise of 2.6 e− rms, and high frame rate of 48 fps. This sensor also showed an energy resolution of 80 eV to 1,000 eV photon. We demonstrated fluorescence detection from highly-oriented graphite and a polymethyl methacrylate film using a simple setup, where the samples faced a CMOS sensor without a monochromator. This energy-resolving performance and high frame rate will facilitate new applications for soft X-ray and EUV experiments.

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“…The diffraction efficiency of the fabricated transmission grating was measured at beamline 10 of the NewSUBARU synchrotron light facility. 31) A schematic view and photograph of the beamline setup are shown in Figs. 4 and 5, respectively.…”

Section: Diffraction Efficiency Measurementmentioning

confidence: 99%

Fabrication of high-aspect-ratio transmission grating using DDR process for 10 nm EUV resist evaluation by EUV interference lithography

Yoshifuji

Niihara

Harada

et al. 2019

Jpn. J. Appl. Phys.

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We have developed an EUV interference lithographic exposure tool to evaluate a resist. The target patterning size of this system is 10 nm and below in half pitch. Transmission grating fabrication is a key technology in EUV interference lithography. To replicate a 10-nm-line-and-space (L/S) resist pattern on a wafer, a 20-nm-L/S pattern is required for the transmission grating. The pitch size of the interference fringes is half the size of the absorber pattern of the transmission grating. For the chemically amplified positive tone resist process, instead of alkali development, organic development can be adopted to convert to a negative-tone chemical amplification resist process, and pattern collapse can be suppressed. In addition to this process, a dry development rinse (DDR) process is used. The DDR process with dry development successfully prevents pattern collapse at a high aspect pattern because there is no surface tension in the dry development of the DDR process. The EUV diffraction efficiencies of the fabricated gratings were measured to be 14%, 11% and 4% for 40, 30 and 20-nm-L/S pattern grating, respectively. Using these gratings, 20, 15 and 10 nm resist pattern might be replicated on a resist. And the diffraction efficiency was sufficient for interferometric exposure using synchrotron radiation.

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Extreme-ultraviolet collector mirror measurement using large reflectometer at NewSUBARU synchrotron facility

Cited by 8 publications

References 30 publications

High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

Energy- and spatial-resolved detection using a backside-illuminated CMOS sensor in the soft X-ray region

Fabrication of high-aspect-ratio transmission grating using DDR process for 10 nm EUV resist evaluation by EUV interference lithography

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