Extreme mask corrections: technology and benefits

Granik, Yuri; Cobb, Nick; Медведев, Д. А.

doi:10.1117/12.771784

Cited by 15 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, it is possible to formulate the pixel inversion for the OPC purposes. Figure-12 demonstrates the image fidelity achieved by the pixel-based image correction with the extreme correction engine as described in [6]. Pixel inversion is a computer-intensive application.…”

Section: Strong Psm Schemesmentioning

confidence: 99%

Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond

2008

Self Cite

View full text Add to dashboard Cite

SRAF insertion through inverse microlithography methodologies has been explored at length in recent years as one of the most promising approaches to determining the right placements of Model-based SRAF (MBSRAF) for complex two dimensional geometrical configurations for advanced nodes. This work will discuss the latest development of MBSRAF insertion software at Mentor Graphics. The software system operates on the principles of inverse methods of microlithography or pixel inversion. The ability to examine the image of every pixel in the work region as well as the mathematical solution to synthesize the mask shapes as a cost minimization problem make it possible to reliably deal with SRAF insertion for advanced illumination schemes such as quasar, dipole and cross-quad. Pixel inversion involving high transmission attenuated PSM as well as hard PSM will be also discussed. We will also report on the MRC capability to make the pixel inversion mask shapes manufacturable.

show abstract

Section: Strong Psm Schemesmentioning

confidence: 99%

Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond

2008

Self Cite

View full text Add to dashboard Cite

show abstract

“…The engine of extreme corrections uses methods of inverse lithography [3,4]. Large pieces of the layout are broken down into rectangular frames.…”

Section: Pixopc Theorymentioning

confidence: 99%

Inverse vs. traditional OPC for the 22nm node

et al. 2009

Self Cite

View full text Add to dashboard Cite

The 22nm node will be patterned with very challenging Resolution Enhancement Techniques (RETs) such as double exposure or double patterning. Even with those extreme RETs, the k1 factor is expected to be less than 0.3. There is some concern in the industry that traditional edge-based simulate-then-move Optical Proximity Correction (OPC) may not be up to the challenges expected at the 22nm node. Previous work presented the advantages of a so-called inverse OPC approach when coupled with extreme RETs or illumination schemes. The smooth mask contours resulting from inverse corrections were shown not to be limited by topological identity, feedback locality, or fragment conformity. In short, inverse OPC can produce practically unconstrained and often non-intuitive mask shapes. The authors will expand this comparison between traditional and inverse OPC to include likely 22nm RETs such as double dipole lithography and double patterning, comparing dimensional control through process window for each OPC method. The impact of mask simplification of the inverse OPC shapes into shapes which can be reliably manufactured will also be explored.

show abstract

“…Inverse lithography tools have been providing reference solutions since 2004 [1][2] and the remaining challenge is to find lithographically and cost effective transformations from the ILT guidance to full chip, manufacturable mask solutions. To control photomask costs (given current infrastructure) the ideal solutions are ones that use exclusively rectangles in the transformation output.…”

Section: Introductionmentioning

confidence: 99%

Model-based SRAF solutions for advanced technology nodes

et al. 2013

View full text Add to dashboard Cite

Traditional SRAF placement has been governed by a generation of rules that are experimentally derived based on measurements on test patterns for various exposure conditions. But with the shrinking technology nodes, there are increased challenges in coming up with these rules. Model-based SRAF placement can help in improved overall process window, with less effort. This is true especially for two-dimensional layouts, where SRAF placement conflicts can provide a formidable challenge with varying patterns and sources. This paper investigates the trade-offs and benefits of using model-based SRAF placement over rule-based for various design configurations on a full chip. The impact on cost, time, process-window and performance will be studied. This paper will also explore the benefits and limitations of more complex free-form SRAF and OPC shapes generated by Inverse Lithography Technology (ILT), and strategies for integration into a manufacturable mask.

show abstract

Extreme mask corrections: technology and benefits

Cited by 15 publications

References 6 publications

Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond

Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond

Inverse vs. traditional OPC for the 22nm node

Model-based SRAF solutions for advanced technology nodes

Contact Info

Product

Resources

About