Extraction of the components of effective mobility in thin films

Abstract

In thin films, we deal with such a physical phenomenon as the coupling-effect. In this study, this effect was used to redistribute charge carriers in silicon-on-insulator thin films to determine the effective mobility near the interface under study. Temperature dependences of mobility were applied to experimental results to extract components of effective mobility related to phonon and interface roughness scattering of the carriers. These components are more suitable to show differences in the interface quality of films than values of effective mobility. The suggested approach can be used for the non-destructive analysis of interface quality in films.

Conditions for the identical distribution of free carriers in thin films

“…For experimental studies of mobility and structural quality of films, the technique of the independent extraction of the components of µ eff related to phonon and roughness scattering [26], high-resolution electron microscopy (HREM), and Raman spectroscopy were also used. Raman spectra were acquired using a spectrometer employing an ultraviolet 325 nm excitation laser wavelength.…”

“…At the high values of N e , the observed relation of µ eff (20 nm) < µ eff (30 nm) means that the Si/BOX interface roughness scattering for the 20 nm films is more than for 30 nm films. The interface roughness scattering can be estimated using the temperature measurement of mobility, the method of extraction mobility components proposed in [26], and the HREM measurements.…”